IXFN340N07_04 Datasheet, PDF (1/5 Pages) IXYS Corporation – HiPerFET™ Power MOSFETs Single Die MOSFET

HiPerFET^TM
Power MOSFETs
Single Die MOSFET
IXFN 340N07
D
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t_rr
Symbol
Test Conditions
G
S
S
Maximum Ratings
V_DSS
V_DGR
V
GS
V_GSM
I_D25
I_L(RMS)
I_DM
I_AR
E_AR
E_AS
dv/dt
P
D
T_J
T_JM
T_stg
V_ISOL
M_d
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GS = 1 MΩ
Continuous
Transient
T_C = 25°C, Chip capability
Terminal current limit
T_C = 25°C, pulse width limited by T_JM
T_C = 25°C
T_C = 25°C
T_C = 25°C
I
S
≤
I,
DM
di/dt
≤
100
A/μs,
V
DD
≤
V,
DSS
T_J ≤ 150°C, R_G = 2 Ω
T
C
= 25°C
50/60 Hz, RMS t = 1 min
I_ISOL ≤ 1 mA
t=1s
Mounting torque
Terminal connection torque
70
70
±20
±30
340
100
1360
200
64
4
10
V
V
V
V
A
A
A
A
mJ
J
V/ns
700
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
2500
V~
3000
V~
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
Weight
30
g
V_DSS = 70 V
I_D25 = 340 A
= R_DS(on)
4 mΩ
t_rr
≤ 200 ns
miniBLOC, SOT-227 B (IXFN)
E153432
S
G
S
D
G = Gate
S = Source
D = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
• International standard package
• miniBLOC, with Aluminium nitride
isolation
• Low R_{DS (on)} HDMOS^TM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
• Low package inductance
• Fast intrinsic Rectifier
Symbol
Test Conditions
V_DSS
V_GH(th)
I
GSS
I_DSS
R_DS(on)
V_GS = 0 V, I_D = 3 mA
V_DS = V_GS, I_D = 8 mA
V
GS
=
±20
V,
DC
V
DS
=
0
V_DS = V_DSS
V_GS = 0 V
V_GS = 10 V, I_D = 100A
Pulse test, t ≤ 300 μs,
duty cycle d ≤ 2 %
© 2004 IXYS All rights reserved
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
70
2.0
T_J = 25°C
T_J = 125°C
V
4.0 V
±200 nA
100 μA
2 mA
4 mΩ
Applications
• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• Temperature and lighting controls
• Linear current regulators
Advantages
• Easy to mount
• Space savings
• High power density
DS98547D(05/04)