IXFN340N07 Datasheet, PDF (1/2 Pages) IXYS Corporation – HiPerFET Power MOSFETs Single Die MOSFET

HiPerFET^TM
Power MOSFETs
Single Die MOSFET
IXFN 340N07
D
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t_rr
Symbol
Test Conditions
G
S
S
Maximum Ratings
V
DSS
V
DGR
V_GS
V_GSM
I_D25
I
L(RMS)
I_DM
I
AR
E_AR
E_AS
dv/dt
P_D
T_J
T_JM
T
stg
V_ISOL
M
d
T
J
= 25°C to 150°C
T
J
=
25°C
to
150°C;
R
GS
=
1
MW
Continuous
Transient
T_C = 25°C, Chip capability
Terminal current limit
T_C = 25°C, pulse width limited by T_JM
T
C
= 25°C
T_C = 25°C
T_C = 25°C
I_S £ I_DM, di/dt £ 100 A/ms, V_DD £ V_DSS,
T
J
£
150°C,
R
G
=
2
W
T_C = 25°C
50/60 Hz, RMS t = 1 min
I_ISOL £ 1 mA
t=1s
Mounting torque
Terminal connection torque
70
70
±20
±30
340
100
1360
200
64
4
5
V
V
V
V
A
A
A
A
mJ
J
V/ns
700
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
2500
V~
3000
V~
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
Weight
30
g
V = 70 V
DSS
I_D25 = 340 A
= R_DS(on)
4 mW
t
rr
£
250ns
miniBLOC, SOT-227 B (IXFN)
E153432
S
G
S
D
G = Gate
S = Source
D = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
• Internationalstandardpackages
• miniBLOC, with Aluminium nitride
isolation
• Low R_{DS (on)} HDMOS^TM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
• Low package inductance
• FastintrinsicRectifier
Symbol
V_DSS
V
GH(th)
I_GSS
I_DSS
R_DS(on)
Test Conditions
V_GS = 0 V, I_D = 3 mA
V = V , I = 8 mA
DS
GS D
V_GS = ±20 V_DC, V_DS = 0
V_DS = V_DSS
V_GS = 0 V
V_GS = 10 V, I_D = 100A
Pulse test, t £ 300 ms,
duty cycle d £ 2 %
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
70
2.0
T_J = 25°C
T_J = 125°C
V
4.0 V
±200 nA
100 mA
2 mA
4 mW
Applications
• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• Temperature and lighting controls
Advantages
• Easy to mount
• Space savings
• High power density
© 2000 IXYS All rights reserved
98547B (10/00)