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IXFN340N06 Datasheet, PDF (1/2 Pages) IXYS Corporation – HiPerFET Power MOSFETs Single Die MOSFET | |||
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Advanced Technical Information
HiPerFETTM
Power MOSFETs
Single Die MOSFET
IXFN 340N06
D
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low trr
Symbol
Test Conditions
G
S
S
Maximum Ratings
V
DSS
V
DGR
VGS
VGSM
ID25
I
L(RMS)
IDM
I
AR
EAR
EAS
dv/dt
PD
TJ
TJM
T
stg
VISOL
M
d
T
J
= 25°C to 150°C
T
J
=
25°C
to
150°C;
R
GS
=
1
MW
Continuous
Transient
TC = 25°C, Chip capability
Terminal current limit
TC = 25°C, pulse width limited by TJM
T
C
= 25°C
TC = 25°C
TC = 25°C
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS,
T
J
£
150°C,
R
G
=
2
W
TC = 25°C
50/60 Hz, RMS t = 1 min
IISOL £ 1 mA
t=1s
Mounting torque
Terminal connection torque
60
60
±20
±30
340
100
1360
200
64
4
5
V
V
V
V
A
A
A
A
mJ
J
V/ns
700
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
2500
V~
3000
V~
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
Weight
30
g
VDSS =
ID25 =
RDS(on) =
60 V
340 A
3 mW
trr £ 250 ns
miniBLOC, SOT-227 B (IXFN)
E153432
S
G
S
D
G = Gate
S = Source
D = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
 Internationalstandardpackages
 miniBLOC, with Aluminium nitride
isolation
 Low RDS (on) HDMOSTM process
 Rugged polysilicon gate cell structure
 Unclamped Inductive Switching (UIS)
rated
 Low package inductance
 FastintrinsicRectifier
Symbol
VDSS
V
GH(th)
IGSS
IDSS
RDS(on)
Test Conditions
VGS = 0 V, ID = 3 mA
V = V , I = 8 mA
DS
GS D
VGS = ±20 VDC, VDS = 0
V DS = VDSS
VGS = 0 V
VGS = 10 V, ID = 100A
Pulse test, t £ 300 ms,
duty cycle d £ 2 %
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
60
2.0
TJ = 25°C
TJ = 125°C
V
4.0 V
±200 nA
100 mA
2 mA
3 mW
Applications
 DC-DC converters
 Battery chargers
 Switched-mode and resonant-mode
power supplies
 DC choppers
 Temperature and lighting controls
Advantages
 Easy to mount
 Space savings
 High power density
© 2000 IXYS All rights reserved
98751 (10/00)
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