IXFN32N120 Datasheet, PDF (1/4 Pages) IXYS Corporation – HiPerFET Power MOSFETs

Advanced Technical Data
HiPerFET^TM
Power MOSFETs
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t_rr
Symbol
V_DSS
V_DGR
V_GS
V_GSM
I_D25
I_DM
I_AR
E_AR
E_AS
dv/dt
P_D
T_J
T_JM
T_stg
V_ISOL
M_d
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GS = 1 MΩ
Continuous
Transient
T_C = 25°C, Chip capability
T_C = 25°C, pulse width limited by T_JM
T_C = 25°C
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, di/dt ≤ 100 A/µs, V_DD ≤ V_DSS,
T_J≤ 150°C, R_G = 2 Ω
T_C= 25°C
50/60 Hz, RMS t = 1 min
I_ISOL ≤ 1 mA
t=1s
Mounting torque
Terminal connection torque
IXFN 32N120
D
V = 1200V
DSS
I_D25 = 32A
= R_DS(on) 0.35Ω
G
S
S
Maximum Ratings
1200
V
1200
V
±30
V
±40
V
32
A
128
A
32
A
64
mJ
4
J
15 V/ns
miniBLOC, SOT-227 B (IXFN)
E153432
S
G
S
D
G = Gate
S = Source
D = Drain
TAB = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
780
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
2500
V~
3000
V~
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
30
g
Features
• International standard package
• miniBLOC, with Aluminium nitride
isolation
• Low R_{DS (on)} HDMOS^TM process
• Rugged polysilicon gate cell
structure
• Unclamped Inductive Switching (UIS)
rated
• Low package inductance
• Fast intrinsic Rectifier
Symbol
Test Conditions
V_DSS
V_GS(th)
I_GSS
I_DSS
R_DS(on)
V_GS = 0 V, I_D = 3 mA
V_DS = V_GS, I_D = 8 mA
V_GS(th) = ±30 V_DC, V_DS = 0
VV_GDSS
=
=
0VV^DSS
V_GS = 10 V, I_D = 0.5 • I_D25
Pulse test, t ≤ 300 µs,
duty cycle d ≤ 2 %
© 2003 IXYS All rights reserved
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
1200
2.5
V
5.0 V
TT_JJ
=
=
25°C
125°C
±200 nA
50 µA
3 mA
0.35 Ω
Applications
• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• Temperature and lighting controls
Advantages
• Easy to mount
• Space savings
• High power density
DS98968B(10/03)