IXFN30N120P Datasheet, PDF (1/4 Pages) IXYS Corporation – Polar Power MOSFET HiPerFET

Polar^TM Power MOSFET
HiPerFET^TM
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFN30N120P
Symbol
V_DSS
V_DGR
V_GSS
V_GSM
I_D25
I_DM
I_A
E_AS
dV/dt
P_D
T_J
T_JM
T_stg
T_L
V_ISOL
M_d
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C, R_GS = 1MΩ
Continuous
Transient
T_C = 25°C
T_C = 25°C, pulse width limited by T_JM
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, V_DD ≤ V_DSS, T_J ≤ 150°C
T_C = 25°C
1.6mm (0.062 in.) from case for 10s
50/60 Hz, RMS
I_ISOL ≤ 1mA
Mounting torque
Terminal connection torque
t = 1min
t = 1s
Maximum Ratings
1200
V
1200
V
± 30
V
± 40
V
30
A
75
A
15
A
2
J
20
V/ns
890
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
2500
3000
1.5/13
1.3/11.5
V~
V~
Nm/lb.in.
Nm/lb.in.
30
g
Symbol
Test Conditions
(T_J = 25°C, unless otherwise specified)
BV_DSS
V_GS = 0V, I_D = 3mA
V_GS(th)
V_DS = V_GS, I_D = 1mA
I_GSS
V_GS = ± 30V, V_DS = 0V
I_DSS
V_DS = V_DSS
V_GS = 0V
T_J = 125°C
R_DS(on)
V_GS = 10V, I_D = 0.5 • I_D25, Note 1
Characteristic Values
Min. Typ. Max.
1200
V
3.5
6.5 V
± 300 nA
50 μA
5 mA
350 mΩ
V_DSS = 1200V
I_D25 = 30A
≤ R_DS(on) 350mΩ
t_rr
≤ 300ns
miniBLOC, SOT-227 B (IXFN)
E153432
S
G
G = Gate
S = Source
S
D
D = Drain
Either Source terminal S can be used as the
Source terminal or the Kelvin Source (gate
return) terminal.
Features
• International standard package
• Encapsulating epoxy meets
UL 94 V-0, flammability classification
• miniBLOC with Aluminium nitride
isolation
• Fast recovery diode
• Unclamped Inductive Switching (UIS)
rated
• Low package inductance
- easy to drive and to protect
Advantages
• Easy to mount
• Space savings
• High power density
Applications
z _{High Voltage Switched-mode and}
resonant-mode power supplies
z _{High Voltage Pulse Power}
Applications
z _{High Voltage Discharge circuits in}
Laser Pulsers, Spark Igniters, RF
Generators
z _{High Voltage DC-DC converters}
z _{High Voltage DC-AC inverters}
© 2008 IXYS CORPORATION, All rights reserved
DS99884A (4/08)