IXFN280N085 Datasheet, PDF (1/5 Pages) IXYS Corporation – HiPerFET Power MOSFETs Single Die MOSFET

HiPerFET^TM Power
MOSFETs Single Die
MOSFET
IXFN280N085
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t_rr
Symbol
V_DSS
V_DGR
V_GSS
V_GSM
I_D25
I_L(RMS)
I_DM
I_A
E_AS
dV/dt
P_d
T_J
T_JM
T_stg
V_ISOL
M_d
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C, R_GS = 1MΩ
Continuous
Transient
T_C = 25°C, Chip capability
External Lead Current Limit
T_C = 25°C, pulse width limited by T_JM
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, V_DD ≤ V_DSS, T_J ≤ 150°C
T_C = 25°C
50/60 Hz, RMS t = 1min
I_ISOL ≤ 1mA
t = 1s
Mounting torque
Terminal connection torque
Maximum Ratings
85
V
85
V
±20
V
±30
V
280
A
200
A
1120
A
200
A
4
J
5
V/ns
700
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
2500
V~
3000
V~
1.5/13
1.3/11.5
Nm/lb.in.
Nm/lb.in.
30
g
Symbol
BV_DSS
V_GS(th)
I_GSS
I_DSS
R_DS(on)
Test Conditions
Characteristic Values
(T_J = 25°C, unless otherwise specified)
Min. Typ. Max.
V_GS = 0V, I_D = 3mA
85
V_DS = V_GS, I_D = 8mA
2.0
V_GS = ±20V, V_DS = 0V
V_DS = V_DSS
V_GS = 0V
T_J = 125°C
V_GS = 10V, I_D = 100A, Note 1
V
4.0 V
±200 nA
100 μA
2 mA
4.4 mΩ
V_DSS = 85V
I_D25 = 280A
≤ R_DS(on) 4.4mΩ
miniBLOC, SOT-227 B
E153432
S
G
S
D
G = Gate
S = Source
D = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
• International standard package
• miniBLOC, with Aluminium nitride
isolation
• Low R_DS(on) HDMOS^TM process
• Rugged polysilicon gate cell structure
• Avalanche rated
• Guaranteed FBSOA
• Low package inductance
• Fast intrinsic Rectifier
Advantages
• Easy to mount
• Space savings
• High power density
Applications
• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• Temperature and lighting controls
© 2008 IXYS Corporation, All rights reserved
DS98747B(12/08)