IXFN27N80Q Datasheet, PDF (1/2 Pages) IXYS Corporation – HiPerFET Power MOSFETs Q-Class

HiPerFET^TM
Power MOSFETs
Q-Class
Single Die MOSFET
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t_rr
Preliminary data sheet
Symbol
Test Conditions
V
DSS
V_DGR
V_GS
V
GSM
I_D25
I_DM
I_AR
E_AR
E
AS
dv/dt
P_D
T_J
T_JM
T_stg
V_ISOL
M_d
Weight
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GS = 1 MΩ
Continuous
Transient
T_C = 25°C
T_C = 25°C, pulse width limited by T_JM
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, di/dt ≤ 100 A/µs, V_DD ≤ V_DSS,
T_J ≤ 150°C, R_G = 2 Ω
T_C = 25°C
50/60 Hz, RMS
I_ISOL ≤ 1 mA
t = 1 min
t=1s
Mounting torque
Terminal connection torque
IXFN 27N80Q
V_DSS
I_D25
R_DS(on)
= 800 V
= 27 A
= 320 mΩ
D
G
S
S
Maximum Ratings
800
V
800
V
±20
V
±30
V
27
A
108
A
27
A
60
mJ
2.5
J
5 V/ns
miniBLOC, SOT-227 B (IXFN)
E153432
S
G
S
D
G = Gate
D = Drain
S = Source
TAB = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
520
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
2500
V~
3000
V~
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
30
g
Features
• Internationalstandardpackage
• Epoxy meet
UL94V-0, flammability classification
• miniBLOCwith Aluminium nitride
isolation
• IXYS advanced low Q_g process
• Ruggedpolysilicongatecellstructure
• Unclamped Inductive Switching (UIS)
rated
• Lowpackageinductance
• FastintrinsicRectifier
Symbol
Test Conditions
V_DSS
V_GH(th)
I
GSS
I_DSS
R_DS(on)
V_GS = 0 V, I_D = 250 µA
V_DS = V_GS, I_D = 4 mA
V_GS = ±20 V_DC, V_DS = 0
V_DS = V_DSS
V_GS = 0 V
V_GS = 10 V, I_D = 0.5 I_D25
Note 1
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ.
max.
800
2.5
T_J = 25°C
T_J = 125°C
V
4.5 V
±100 nA
100 µA
2 mA
0.32 Ω
Applications
• DC-DC converters
• Batterychargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• Temperatureandlightingcontrols
Advantages
• Easy to mount
• Space savings
• High power density
© 2001 IXYS All rights reserved
98813 (04/01)