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IXFN25N90 Datasheet, PDF (1/4 Pages) IXYS Corporation – HiPerFET Power MOSFETs Single Die MOSFET
HiPerFETTM Power MOSFETs
Single Die MOSFET
N-Channel Enhancement Mode
Avalanche Rated,High dv/dt, Low trr
Fast Intrinsic Diode
IXFN25N90
IXFN26N90
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
ID25
IDM
IAR
IAR
EAR
EAS
dV/dt
PD
TJ
TJM
Tstg
TL
VISOL
Md
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
TC = 25°C
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C
TC = 25°C
1.6mm (0.062 in.) from case for 10s
50/60 Hz, RMS
IISOL ≤ 1mA
Mounting torque
Terminal connection torque
t = 1min
t = 1s
Maximum Ratings
900
V
900
V
± 20
V
± 30
V
25N90 25
A
25N90 100
A
26N90 26
A
26N90 104
A
25N90 25
A
26N90 26
A
64
mJ
3
J
5
V/ns
600
W
-55 ... +150
150
-55 ... +150
300
2500
3000
1.5/13
1.3/11.5
30
°C
°C
°C
°C
V~
V~
Nm/lb.in.
Nm/lb.in.
g
Symbol
BVDSS
VGS(th)
IGSS
IDSS
RDS(on)
Test Conditions
Characteristic Values
(TJ = 25°C unless otherwise specified)
Min. Typ. Max.
VGS = 0V, ID = 3mA
900
V
VDS = VGS, ID = 8mA
3.0
5.0 V
VGS = ± 20V, VDS = 0V
± 200 nA
VDS = 0.8 • VDSS
VGS = 0V
TJ = 125°C
VGS = 10V, ID = 0.5 • ID25, Note 1
25N90
26N90
100 μA
2 mA
330 mΩ
300 mΩ
© 2008 IXYS CORPORATION, All rights reserved
VDSS
900V
900V
ID25
25A
26A
RDS(on)
330mΩ
300mΩ
miniBLOC, SOT-227
E153432
S
G
G = Gate
S = Source
S
D
D = Drain
Either Source terminal S can be used as the
Source terminal or the Kelvin Source (gate
return) terminal.
Features
z International standard package
z miniBLOC, with Aluminium nitride
isolation
z Low RDS(ON) HDMOSTM process
z Avalanche Rated
z Low package inductance
z Fast intrinsic diode
Advantages
z Low gate drive requirement
z High power density
Applications:
z Switched-mode and resonant-mode
power supplies
z DC-DC Converters
z Battery chargers
z DC choppers
z Temperature & lighting controls
DS97526F(12/08)