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| IXFN24N100_08 Datasheet, PDF (1/4 Pages) IXYS Corporation – HiPerFET Power MOSFET | |||
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HiPerFETTM Power
MOSFET
IXFN24N100
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IA
EAS
dV/dt
PD
TJ
TJM
Tstg
TL
VISOL
M
d
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
IS ⤠IDM, VDD ⤠VDSS, TJ ⤠150°C
TC = 25°C
1.6mm (0.062 in.) from case for 10s
50/60 Hz, RMS
IISOL ⤠1mA
Mounting torque
Terminal connection torque
t = 1min
t = 1s
Maximum Ratings
1000
V
1000
V
±20
V
± 30
V
24
A
96
A
24
A
3
J
5
V/ns
568
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
2500
V~
3000
V~
1.5/13
1.3/11.5
Nm/lb.in.
Nm/lb.in.
30
g
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
BVDSS
VGS = 0V, ID = 3mA
Characteristic Values
Min. Typ. Max.
1000
V
VGS(th)
VDS = VGS, ID = 8mA
3.0
5.5 V
IGSS
VGS = ±20V, VDS = 0V
±200 nA
IDSS
VDS = VDSS
VGS = 0V
TJ = 125°C
100 μA
2 mA
RDS(on)
VGS = 10V, ID = 12A, Note 1
390 mΩ
VDSS = 1000V
ID25 = 24A
RDS(on) ⤠390mΩ
trr
⤠250ns
miniBLOC, SOT-227 B
E153432
S
G
S
D
G = Gate
S = Source
D = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
⢠International standard package
⢠Encapsulating epoxy meets
UL 94 V-0, flammability classification
⢠miniBLOC with Aluminium nitride
isolation
⢠Low RDS (on) HDMOSTM process
⢠Rugged polysilicon gate cell structure
⢠Avalanche rated
⢠Low package inductance
⢠Fast intrinsic Rectifier
Applications
⢠DC-DC converters
⢠Synchronous rectification
⢠Battery chargers
⢠Switched-mode and resonant-mode
power supplies
⢠DC choppers
⢠Temperature and lighting controls
⢠Low voltage relays
Advantages
⢠Easy to mount
⢠Space savings
⢠High power density
© 2008 IXYS CORPORATION, All rights reserved
DS98597H(10/08)
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