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IXFN23N100 Datasheet, PDF (1/4 Pages) IXYS Corporation – HiPerFET-TM Power MOSFET | |||
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HiPerFETTM
Power MOSFET
Single MOSFET Die
Preliminary data sheet
IXFN 24N100
IXFN 23N100
VDSS
ID25
1000 V 24 A
1000 V 23 A
têê ⤠250 ns
RDS(on)
0.39 â¦
0.43 â¦
Symbol Test Conditions
VDSS
VDGR
VGS
VGSM
ID25
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1Mâ¦
Continuous
Transient
TC = 25°C
IDM
TC = 25°C; Note 1
I
AR
EAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
VISOL
Md
T
C
= 25°C
TC = 25°C
TC = 25°C
IS ⤠IDM, di/dt ⤠100 A/µs, VDD ⤠VDSS
TJ ⤠150°C, RG = 2 â¦
TC = 25°C
1.6 mm (0.063 in) from case for 10 s
50/60 Hz, RMS
IISOL ⤠1 mA
t = 1 min
t=1s
Mounting torque
Terminal connection torque
Weight
Maximum Ratings
24N100
23N100
24N100
23N100
1000
V
1000
V
±20
V
±30
V
24 A
23
A
96 A
92
A
24 A
60 mJ
3
J
5 V/ns
600 W
-55 ... +150 °C
150 °C
-55 ... +150 °C
300 °C
2500 V~
3000 V~
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
30
g
Symbol Test Conditions
(TJ = 25°C, unless otherwise specified)
VDSS
VGS = 0 V, ID = 3mA
VGS(th) VDS = VGS, ID = 8mA
IGSS
VGS = ±20V, VGS = 0V
IDSS
VDS = VDSS
VGS = 0 V
RDS(on)
VGS = 10V, ID = 0.5 ⢠ID25
Note 2
Characteristic Values
Min. Typ. Max.
1000
V
3.0
5.0 V
±100 nA
TJ = 25°C
TJ = 125°C
23N100
24N100
100 µA
2 mA
0.43 â¦
0.39 â¦
miniBLOC, SOT-227 B (IXFN)
E153432
S
G
S
D
G = Gate
S = Source
D = Drain
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Features
⢠International standard package
⢠Encapsulating epoxy meets
UL 94 V-0, flammability classification
⢠miniBLOC with Aluminium nitride
isolation
⢠Low RDS (on) HDMOSTM process
⢠Rugged polysilicon gate cell structure
⢠Unclamped Inductive Switching (UIS)
rated
⢠Low package inductance
⢠Fast intrinsic Rectifier
Applications
⢠DC-DC converters
⢠Synchronous rectification
⢠Battery chargers
⢠Switched-mode and resonant-mode
power supplies
⢠DC choppers
⢠Temperature and lighting controls
⢠Low voltage relays
Advantages
⢠Easy to mount
⢠Space savings
⢠High power density
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