IXFN230N10_08 Datasheet, PDF (1/5 Pages) IXYS Corporation – Power MOSFET Single Die MOSFET

Power MOSFET
Single Die MOSFET
IXFN230N10
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t_rr
Symbol
V_DSS
V_DGR
V_GSS
V_GSM
I_D25
I_L(RMS)
I_DM
I_A
E_AS
dV/dt
P_d
T_J
T_JM
T_stg
V_ISOL
M_d
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C, R_GS = 1MΩ
Continuous
Transient
T_C = 25°C, Chip capability
External lead current limit
T_C = 25°C, pulse width limited by T_JM
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, V_DD ≤ V_DSS, T_J ≤ 150°C
T_C = 25°C
50/60 Hz, RMS t = 1min
I_ISOL ≤ 1mA
t = 1s
Mounting torque
Terminal connection torque
Maximum Ratings
100
V
100
V
±20
V
±30
V
230
A
200
A
920
A
100
A
4
J
10
V/ns
700
W
-55 ... +150
150
-55 ... +150
2500
3000
1.5/13
1.3/11.5
30
°C
°C
°C
V~
V~
Nm/lb.in.
Nm/lb.in.
g
Symbol
Test Conditions
(T_J = 25°C, unless otherwise specified)
BV_DSS
V_GS = 0V, I_D = 3mA
V_GS(th)
V_DS = V_GS, I_D = 8mA
I_GSS
V_GS = ±20V, V_DS = 0V
I_DSS
V_DS = V_DSS
V_GS = 0V
T_J = 125°C
R_DS(on)
V_GS = 10V, I_D = 0.5 • I_D25, Note 1
Characteristic Values
Min. Typ. Max.
100
V
2.0
4.0 V
±200 nA
100 μA
2 mA
6.0 mΩ
V_DSS = 100V
I_D25 = 230A
≤ R_DS(on) 6.0mΩ
t_rr
≤ 250ns
miniBLOC, SOT-227 B
E153432
S
G
S
D
G = Gate
S = Source
D = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
• International standard package
• miniBLOC, with Aluminium nitride
isolation
• Low R_{DS (on)} HDMOS^TM process
• Rugged polysilicon gate cell structure
• Avalanche rated
• Guaranteed FBSOA
• Low package inductance
• Fast intrinsic Rectifier
Advantages
• Easy to mount
• Space savings
• High power density
Applications
• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• Temperature and lighting controls
© 2008 IXYS Corporation, All rights reserved
DS98548F(12/08)