IXFN230N10 Datasheet, PDF (1/2 Pages) IXYS Corporation – Power MOSFETs Single Die MOSFET

Advanced Technical Information
HiPerFET^TM
Power MOSFETs
Single Die MOSFET
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t_rr
Symbol
V_DSS
V_DGR
V_GS
V_GSM
I_D25
I_L(RMS)
I_DM
I_AR
E_AR
E_AS
dv/dt
P_D
T_J
T_JM
T_stg
V_ISOL
M_d
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GS = 1 MΩ
Continuous
Transient
T_C = 25°C, Chip capability
Terminal current limit
T_C = 25°C, pulse width limited by T_JM
T_C = 25°C
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, di/dt ≤ 100 A/µs, V_DD ≤ V_DSS,
T_J ≤ 150°C, R_G = 2 Ω
T_C = 25°C
50/60 Hz, RMS t = 1 min
I_ISOL ≤ 1 mA
t=1s
Mounting torque
Terminal connection torque
IXFN 230N10
D
G
S
S
Maximum Ratings
100
V
100
V
±20
V
±30
V
230
A
100
A
920
A
150
A
64
mJ
4
J
5 V/ns
700
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
2500
V~
3000
V~
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
30
g
Symbol
V_DSS
V_GH(th)
I_GSS
I_DSS
R_DS(on)
Test Conditions
V_GS = 0 V, I_D = 3 mA
V_DS = V_GS, I_D = 8 mA
V_GS = ±20 V_DC, V_DS = 0
V_DS = V_DSS
V_GS = 0 V
V_GS = 10 V, I_D = 0.5 • I_D25
Pulse test, t ≤ 300 µs,
duty cycle d ≤ 2 %
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
100
2.0
T_J = 25°C
T_J = 125°C
V
4.0 V
±200 nA
100 µA
2 mA
6 mΩ
V_DSS
I_D25
R_DS(on)
t_rr
= 100
= 230
=6
< 250
V
A
mW
ns
miniBLOC, SOT-227 B (IXFN)
E153432
S
G
S
D
G = Gate
S = Source
D = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
• International standard packages
• miniBLOC, with Aluminium nitride
isolation
• Low R_{DS (on)} HDMOS^TM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
• Low package inductance
• Fast intrinsic Rectifier
Applications
• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• Temperature and lighting controls
Advantages
• Easy to mount
• Space savings
• High power density
© 1998 IXYS All rights reserved
98548A (9/98)