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| IXFN22N120 Datasheet, PDF (1/2 Pages) IXYS Corporation – HiPerFET Power MOSFETs | |||
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Advanced Technical Information
HiPerFETTM
Power MOSFETs
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low trr
Symbol
VDSS
VDGR
VGS
VGSM
ID25
IDM
IAR
EAR
dv/dt
PD
T
J
T
JM
Tstg
VISOL
M
d
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 Mâ¦
Continuous
Transient
TC = 25°C, Chip capability
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
IS ⤠IDM, di/dt ⤠100 A/µs, VDD ⤠VDSS,
TJ⤠150°C, RG = 2 â¦
TC= 25°C
50/60 Hz, RMS t = 1 min
IISOL ⤠1 mA
t=1s
Mounting torque
Terminal connection torque
IXFN 22N120
D
V = 1200V
DSS
ID25 =
= RDS(on)
t
rr
â¤
22A
0.55â¦
300ns
G
S
S
Maximum Ratings
1200
V
1200
V
±30
V
±40
V
22
A
88
A
22
A
30
mJ
5 V/ns
miniBLOC, SOT-227 B (IXFN)
E153432
S
G
S
D
G = Gate
S = Source
D = Drain
TAB = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
625
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
2500
V~
3000
V~
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
30
g
Features
â¢International standard packages
â¢miniBLOC, with Aluminium nitride
isolation
â¢Low RDS (on) HDMOSTM process
â¢Rugged polysilicon gate cell structure
â¢Unclamped Inductive Switching (UIS)
rated
â¢Low package inductance
â¢Fast intrinsic Rectifier
Symbol
VDSS
VGH(th)
IGSS
I
DSS
RDS(on)
Test Conditions
VGS = 0 V, ID = 3 mA
VDS = VGS, ID = 8 mA
VGS = ±30 VDC, VDS = 0
V =V
DS
DSS
VGS = 0 V
VGS = 10 V, ID = 0.5 ⢠ID25
Pulse test, t ⤠300 µs,
duty cycle d ⤠2 %
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
1200
3.0
T=
J
25°C
TJ = 125°C
V
5.0 V
±200 nA
50 µA
2 mA
0.55 â¦
Applications
⢠DC-DC converters
⢠Battery chargers
⢠Switched-mode and resonant-mode
power supplies
⢠DC choppers
⢠Temperature and lighting controls
Advantages
⢠Easy to mount
⢠Space savings
⢠High power density
© 2001 IXYS All rights reserved
DS98967(12/02)
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