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IXFN21N100Q Datasheet, PDF (1/4 Pages) IXYS Corporation – HiPerFET TM Power MOSFETs Q-Class
HiPerFETTM
Power MOSFETs
Q-Class
Single MOSFET Die
N-Channel Enhancement Mode
Avalanche Rated, Low Qg, High dv/dt
IXFN 21N100Q
Symbol
VDSS
VDGR
V
GS
VGSM
ID25
IDM
IAR
EAR
EAS
dv/dt
PD
T
J
T
JM
T
stg
VISOL
M
d
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
T
J
≤
150°C,
R
G
=
2
Ω
TC = 25°C
50/60 Hz, RMS t = 1 min
IISOL≤ 1 mA
t=1s
Mounting torque
Terminal connection torque
Maximum Ratings
1000
V
1000
V
±20
V
±30
V
21
A
84
A
21
A
60
mJ
2.5
J
5
V/ns
520
-55 to +150
150
-55 to +150
2500
3000
1.5/13
1.5/13
30
W
°C
°C
°C
V~
V~
Nm/lb.in.
Nm/lb.in.
g
Symbol
VDSS
VGS(th)
IGSS
IDSS
RDS(on)
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VGS = 0 V, ID = 1 mA
VDS = VGS, ID = 1.5 mA
1000
2.5
VGS = ±20 VDC, VDS = 0
VDS = VDSS
VGS = 0 V
TJ = 125°C
VGS = 10 V, ID = 0.5 ID25
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
V
4.5 V
±100 nA
100 µA
2 mA
0.50 Ω
VDSS = 1000 V
ID25 = 21 A
RDS(on) = 0.50 Ω
trr ≤ 250 ns
miniBLOC, SOT-227 B (IXFN)
E153432
S
G
S
D
G = Gate
S = Source
D = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
• IXYS advanced low Qg process
• Lowgatechargeandcapacitances
- easier to drive
-faster switching
• Unclamped Inductive Switching (UIS)
rated
• Low RDS (on)
• Fastintrinsicdiode
• Internationalstandardpackage
• miniBLOC with Aluminium nitride
isolation for low thermal resistance
• Low terminal inductance (<10 nH) and
stray capacitance to heatsink (<35pf)
• Molding epoxies meet UL 94 V-0
flammability classification
Applications
• DC-DC converters
• Batterychargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• Temperatureandlightingcontrols
Advantages
• Easy to mount
• Space savings
• High power density
© 2001 IXYS All rights reserved
98762A (12/01)