IXFN210N20P Datasheet, PDF (1/5 Pages) IXYS Corporation – Polar HiPerFET

Polar^TM HiPerFET^TM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFN210N20P
Symbol
V_DSS
V_DGR
V_GSS
V_GSM
I_D25
I_DM
I_A
E_AS
dv/dt
P_D
T_J
T_JM
T_stg
T_L
V_ISOL
M_d
Weight
Test Conditions
T_J = 25°C to 175°C
T_J = 25°C to 175°C, R_GS = 1MΩ
Continuous
Transient
T_C = 25°C
T_C = 25°C, Pulse Width Limited by T_JM
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, V_DD ≤ V_DSS, T_J ≤ 175°C
T_C = 25°C
1.6mm (0.062 in.) from Case for 10s
50/60 Hz, RMS
I_ISOL ≤ 1mA
Mounting Torque
Terminal Connection Torque
t = 1min
t = 1s
Maximum Ratings
200
V
200
V
±20
V
± 30
V
188
A
600
A
105
A
4
J
20
1070
-55 ... +175
175
-55 ... +175
300
V/ns
W
°C
°C
°C
°C
2500
3000
1.5/13
1.3/11.5
30
V~
V~
Nm/lb.in.
Nm/lb.in.
g
Symbol
Test Conditions
(T_J = 25°C, Unless Otherwise Specified)
BV_DSS
V_GS = 0V, I_D = 3mA
Characteristic Values
Min. Typ. Max.
200
V
V_GS(th)
V_DS = V_GS, I_D = 8mA
2.5
4.5 V
I_GSS
V_GS = ±20V, V_DS = 0V
±200 nA
I_DSS
V_DS = V_DSS, V_GS = 0V
T_J = 150°C
25 μA
2 mA
R_DS(on)
V_GS = 10V, I_D = 105A, Note 1
10.5 mΩ
V_DSS = 200V
I_D25 = 188A
R_DS(on) ≤ 10.5mΩ
t_rr
≤ 200ns
miniBLOC
E153432
S
G
S
D
G = Gate
S = Source
D = Drain
Either Source Terminal S can be used as
the Source Terminal or the Kelvin Source
(Gate Return) Terminal.
Features
z _{International Standard Package}
z _{miniBLOC, with Aluminium Nitride}
Isolation
z _{Low Package Inductance}
Avalanche Rated
z _{Low RDS(ON) and QG}
z _{Fast Intrinsic Diode}
Advantages
z _{Easy to Mount}
z _{Space Savings}
z _{High Power Density}
Applications
z _{DC-DC Coverters}
z _{Battery Chargers}
z _{Switch-Mode and Resonant-Mode}
Power Supplies
z _{DC Choppers}
z _{AC and DC Motor Drives}
z _{Uninterrupted Power Supplies}
z _{High Speed Power Switching}
Applications
© 2010 IXYS CORPORATION, All Rights Reserved
DS100019A(05/10)