IXFN200N10P Datasheet, PDF (1/5 Pages) IXYS Corporation – Polar HiPerFET Power MOSFET

Polar^TM HiPerFET
Power MOSFET
IXFN 200N10P
N-Channel Enhancement Mode
Fast Intrinsic Diode
Avalanche Rated
V=
DSS
I_D25 =
≤ R_DS(on)
t
rr
≤
100 V
200 A
7.5 mΩ
150 ns
Symbol
V_DSS
V_DGR
V
GS
V_GSM
I_D25
I
D(RMS)
I_DM
I
AR
E_AR
E
AS
dv/dt
P
D
T_J
T_JM
T
stg
V_ISOL
M_d
Weight
Test Conditions
Maximum Ratings
T_J = 25°C to 175°C
T_J = 25°C to 175°C; R_GS = 1 MΩ
Continuous
Transient
100
V
100
V
±20
V
±30
V
T_C = 25°C
200
External lead current limit
100
T_C = 25°C, pulse width limited by T_JM
400
T
C
= 25°C
60
T_C = 25°C
100
T
C
= 25°C
4
I_S ≤ I_DM, di/dt ≤ 100 A/μs, V_DD ≤ V_DSS,
T_J ≤ 150°C, R_G = 4 Ω
T
C
= 25°C
50/60 Hz, RMS,
I_ISOL ≤ 1 mA,
T = 1 min
T=1s
10
680
-55 ... +175
175
-55 ... +150
2500
3000
Mounting torque, Terminal connection torque
1.5/13
30
A
A
A
A
mJ
J
V/ns
W
°C
°C
°C
V~
V~
lb.in.
g
miniBLOC, SOT-227 B (IXFN)
E153432
S
G
S
D
G = Gate
S = Source
D = Drain
Either Source terminal S can be used as the
Source terminal or the Kelvin Source (gate
return) terminal.
Features
• International standard package
• Encapsulating epoxy meets
UL 94 V-0, flammability classification
• miniBLOC with Aluminium nitride
isolation
• Low R_{DS (on)} HDMOS^TM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
• Low package inductance
• Fast intrinsic Rectifier
Symbol
Test Conditions
(T
J
=
25°C,
unless
otherwise
specified)
BV_DSS
V_GS = 0 V, I_D = 250 μA
Characteristic Values
Min. Typ. Max.
100
V
V_GS(th)
V_DS = V_GS, I_D = 8 mA
3.0
5.0 V
I
GSS
V
GS
=
±20
V,
V
DS
=
0
±100 nA
I_DSS
V_DS = V_DSS, V_GS = 0 V
T_J = 150°C
T
J
=
175°C
25 μA
500 μA
2.5 mA
R_DS(on)
V_GS = 10 V, I_D = 0.5 I_D25
V_GS = 15 V, I_D = 400A
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
7.5 mΩ
5.5
mΩ
Applications
• DC-DC converters
• Synchronous rectification
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• Temperature and lighting controls
• Low voltage relays
Advantages
• Easy to mount
• Space savings
• High power density
© 2006 IXYS All rights reserved
DS99239E(03/06)