IXFN180N15P Datasheet, PDF (1/5 Pages) IXYS Corporation – PolarHT HiPerFET Power MOSFET

PolarHT^TM HiPerFET
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFN 180N15P
V=
DSS
I_D25 =
≤ R_DS(on)
t_rr
≤
150 V
150 A
11 mΩ
200 ns
Symbol
V_DSS
V
DGR
V_DSS
V_GSM
I_D25
I_D(RMS)
I_DM
I_AR
E_AR
E_AS
dv/dt
P
D
T_J
T_JM
T
stg
M_d
V_ISOL
T_L
Weight
Test Conditions
T_J = 25° C to 175° C
T
J
=
25°
C
to
175°
C;
R
GS
=
1
MΩ
Continuous
Transient
T_C = 25° C
External lead current limit
T_C = 25° C, pulse width limited by T_JM
T_C = 25° C
T_C = 25° C
T_C = 25° C
I_S ≤I_DM, di/dt ≤100 A/µs, V_DD ≤V_DSS,
T_J ≤150° C, R_G = 4 Ω
T
C
= 25° C
Mounting torque
Terminal connection torque (M4)
50/60 Hz
t = 1 min
I_ISOL ≤1 mA
t=1s
1.6 mm (0.062 in.) from case for 10 s
Maximum Ratings
150
V
150
V
±20
V
±30
V
miniBLOC, SOT-227 B (IXFN)
E153432
S
G
150
A
100
A
380
A
S
D
60
A ^{G = Gate}
D = Drain
S = Source
100
mJ
4
J
Either Source terminal S can be used as the
Source terminal or the Kelvin Source (gate
10
V/ns ^{return) terminal.}
680
W
-55 ... +175
175
-55 ... +150
1.5/13
1.5/13
2500
3000
°C
°C
°C
Nm/lb.in.
Nm/lb.in.
V~
V~
300
°C
30
g
Features
• International standard package
• Encapsulating epoxy meets
UL 94 V-0, flammability classification
• miniBLOC with Aluminium nitride
isolation
l _{Fast recovery diode}
l _{Unclamped Inductive Switching (UIS)}
rated
l _{Low package inductance}
- easy to drive and to protect
Symbol
Test Conditions
(T_J = 25° C, unless otherwise specified)
V_DSS
V_GS = 0 V, I_D = 250 µA
Characteristic Values
Min. Typ. Max.
150
V
V
GS(th)
V = V , I = 4 mA
DS
GS D
2.5
5.0 V
I_GSS
V_GS = ±20 V_DC, V_DS = 0
±100 nA
I_DSS
V_DS = V_DSS, V_GS = 0 V
T_J = 150° C
25 µA
500 µA
R_DS(on)
V_GS = 10 V, I_D = 90 A
Pulse test, t ≤300 µs, duty cycle d ≤ 2 %
11 m Ω
Advantages
l _{Easy to mount}
l _{Space savings}
l _{High power density}
© 2006 IXYS All rights reserved
DS99241E(01/06)