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IXFN180N10 Datasheet, PDF (1/4 Pages) IXYS Corporation – HiPerFET Power MOSFET Single MOSFET Die | |||
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HiPerFETTM
Power MOSFET
Single MOSFET Die
Preliminary data sheet
IXFN 180N10
V
DSS
ID25
RDS(on)
= 100 V
= 180 A
= 8 mâ¦
t
rr
â¤
250
ns
Symbol Test Conditions
VDSS
V
DGR
VGS
VGSM
ID25
IL(RMS)
IDM
IAR
EAR
EAS
dv/dt
PD
T
J
TJM
Tstg
TL
VISOL
M
d
TJ = 25°C to 150°C
T
J
=
25°C
to
150°C,
R
GS
=
1Mâ¦
Continuous
Transient
TC = 25°C
Terminal (current limit)
TC = 25°C; Note 1
TC = 25°C
TC = 25°C
TC = 25°C
IS ⤠IDM, di/dt ⤠100 A/µs, VDD ⤠VDSS
TJ ⤠150°C, RG = 2 â¦
TC = 25°C
1.6 mm (0.063 in) from case for 10 s
50/60 Hz, RMS
IISOL ⤠1 mA
t = 1 min
t=1s
Mounting torque
Terminal connection torque
Weight
Maximum Ratings
100
V
100
V
±20
V
±30
V
180 A
100
A
720 A
180 A
60 mJ
3
J
5 V/ns
600 W
-55 ... +150 °C
150
°C
-55 ... +150 °C
300 °C
2500 V~
3000 V~
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
30
g
Symbol Test Conditions
(T
J
=
25°C,
unless
otherwise
specified)
VDSS
VGS= 0 V, ID = 3mA
VGS(th) VDS = VGS, ID = 8mA
IGSS
VGS= ±20V, VGS = 0V
IDSS
VDS= VDSS
VGS= 0 V
RDS(on)
VGS = 10V, ID = 0.5 ⢠ID25
Note 2
Characteristic Values
Min. Typ. Max.
100
V
2
4V
±100 nA
TJ = 25°C
TJ = 125°C
100 µA
2 mA
8 mâ¦
miniBLOC, SOT-227 B (IXFN)
E153432
S
G
S
D
G = Gate
S = Source
D = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
⢠International standard package
⢠Encapsulating epoxy meets
UL 94 V-0, flammability classification
⢠miniBLOC with Aluminium nitride
isolation
⢠Low RDS (on) HDMOSTM process
⢠Rugged polysilicon gate cell structure
⢠Unclamped Inductive Switching (UIS)
rated
⢠Low package inductance
⢠Fast intrinsic Rectifier
Applications
⢠DC-DC converters
⢠Synchronous rectification
⢠Battery chargers
⢠Switched-mode and resonant-mode
power supplies
⢠DC choppers
⢠Temperature and lighting controls
⢠Low voltage relays
Advantages
⢠Easy to mount
⢠Space savings
⢠High power density
© 1999 IXYS All rights reserved
98546B (8/99)
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