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| IXFN170N65X2 Datasheet, PDF (1/5 Pages) IXYS Corporation – X2-Class HiPerFETTM | |||
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X2-Class HiPerFETTM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFN170N65X2
D
G
S
S
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IA
EAS
PD
dv/dt
TJ
TJM
Tstg
VISOL
Md
Weight
Test Conditions
TJ = 25ï°C to 150ï°C
TJ = 25ï°C to 150ï°C, RGS = 1Mï
Continuous
Transient
TC = 25ï°C
TC = 25ï°C, Pulse Width Limited by TJM
TC = 25ï°C
TC = 25ï°C
TC = 25ï°C
IS ï£ IDM, VDD ï£ VDSS, TJ ï£ 150°C
50/60 Hz, RMS t = 1 minute
IISOL ï£ 1mA
t = 1 second
Mounting Torque
Terminal Connection Torque
Maximum Ratings
650
V
650
V
ï± 30
V
ï± 40
V
170
A
340
A
15
A
5
J
1170
W
50
V/ns
-55 ... +150
ï°C
150
ï°C
-55 ... +150
ï°C
2500
V~
3000
V~
1.5/13
1.3/11.5
Nm/lb.in
Nm/lb.in
30
g
Symbol
Test Conditions
(TJ = 25ï°C Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 3mA
VGS(th)
VDS = VGS, ID = 8mA
IGSS
VGS = ï± 30V, VDS = 0V
IDSS
VDS = VDSS, VGS = 0V
TJ = 125ï°C
RDS(on)
VGS = 10V, ID = 0.5 ⢠ID25, Note 1
Characteristic Values
Min. Typ. Max.
650
V
3.5
5.0 V
ï ï ï ï ï ï ï ï ï ï ï ï ï ï ï ï ï ï ï±ï 200 nA
50 ïA
5 mA
13 mï
VDSS =
ID25 =
RDS(on) ï£
650V
170A
13mï
miniBLOC, SOT-227
ï ï ï ï ï ï ï ï ï ï ï E153432
S
G
G = Gate
S = Source
S
D
D = Drain
Features
ï¬ International Standard Package
ï¬ miniBLOC, with Aluminium Nitride
Isolation
ï¬ Isolation Voltage 2500 V~
ï¬ High Current Handling Capability
ï¬ Fast Intrinsic Diode
ï¬ Avalanche Rated
ï¬ Low RDS(on)
Advantages
ï¬ High Power Density
ï¬ Easy to Mount
ï¬ Space Savings
Applications
ï¬ Switch-Mode and Resonant-Mode
ï ï ï Power Supplies
ï¬ DC-DC Converters
ï¬ PFC Circuits
ï¬ AC and DC Motor Drives
ï¬ Robotics and Servo Controls
© 2016 IXYS CORPORATION, All Rights Reserved
DS100692A(03/16)
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