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| IXFN170N30P Datasheet, PDF (1/5 Pages) IXYS Corporation – Polar Power MOSFET HiPerFET | |||
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Preliminary Technical Information
PolarTM Power MOSFET
HiPerFETTM
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFN170N30P
VDSS = 300V
ID25 = 138A
RDS(on) ⤠18mΩ
trr
⤠200ns
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
ILRMS
IDM
IA
EAS
dV/dt
PD
TJ
TJM
Tstg
TL
VISOL
Md
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
Continuous
Transient
TC = 25°C
External lead current limit
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
IS ⤠IDM, VDD ⤠VDSS, TJ ⤠150°C
TC = 25°C
1.6mm (0.062 in.) from case for 10s
50/60 Hz, RMS
IISOL ⤠1mA
Mounting torque
Terminal connection torque
t = 1min
t = 1s
Maximum Ratings
300
V
300
V
±20
V
± 30
V
138
A
100
A
500
A
85
A
5
J
20
V/ns
890
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
2500
V~
3000
V~
1.5/13
1.3/11.5
Nm/lb.in.
Nm/lb.in.
30
g
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
BVDSS
VGS = 0V, ID = 3mA
VGS(th)
VDS = VGS, ID = 1mA
IGSS
VGS = ±20V, VDS = 0V
IDSS
VDS = VDSS
VGS = 0V
TJ = 125°C
RDS(on)
VGS = 10V, ID = 85A, Note 1
Characteristic Values
Min. Typ. Max.
300
V
2.5
4.5 V
±200 nA
25 μA
1.5 mA
18 mΩ
miniBLOC, SOT-227 B
E153432
S
G
S
D
G = Gate
S = Source
D = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
⢠Fast intrinsic diode
⢠Avalanche Rated
⢠Unclamped Inductive Switching (UIS)
rated
⢠Very low Rth results high power
dissipation
⢠Low RDS(ON) and QG
⢠Low package inductance
Advantages
⢠Low gate charge results in simple
drive requirement
⢠Improved Gate, Avalanche and
dynamic dv/dt ruggedness
⢠High power density
Applications
⢠DC-DC coverters
⢠Battery chargers
⢠Switched-mode and resonant-mode
power supplies
⢠DC choppers
⢠AC and DC motor control
⢠Uninterrupted power supplies
⢠High speed power switching
applications
© 2008 IXYS CORPORATION, All rights reserved
DS100001(06/08)
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