IXFN140N30P Datasheet, PDF (1/5 Pages) IXYS Corporation – Polar Power MOSFET HiPerFET

Polar^TM Power MOSFET
HiPerFET^TM
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFN140N30P
Symbol
V_DSS
V_DGR
V_GSS
V_GSM
I_D25
I_LRMS
I_DM
I_A
E_AS
dV/dt
P_D
T_J
T_JM
T_stg
T_L
V_ISOL
M_d
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C, R_GS = 1MΩ
Continuous
Transient
T_C = 25°C
External lead current limit
T_C = 25°C, pulse width limited by T_JM
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, V_DD ≤ V_DSS, T_J ≤ 150°C
T_C = 25°C
1.6mm (0.062 in.) from case for 10s
50/60 Hz, RMS
I_ISOL ≤ 1mA
Mounting torque
Terminal connection torque
t = 1min
t = 1s
Maximum Ratings
300
V
300
V
±20
V
± 30
V
110
A
100
A
300
A
70
A
5
J
20
V/ns
700
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
2500
V~
3000
V~
1.5/13
1.3/11.5
Nm/lb.in.
Nm/lb.in.
30
g
Symbol
Test Conditions
(T_J = 25°C, unless otherwise specified)
BV_DSS
V_GS = 0V, I_D = 3mA
V_GS(th)
V_DS = V_GS, I_D = 8mA
I_GSS
V_GS = ±20V, V_DS = 0V
I_DSS
V_DS = V_DSS
V_GS = 0V
T_J = 125°C
R_DS(on)
V_GS = 10V, I_D = 70A, Note 1
Characteristic Values
Min. Typ. Max.
300
V
3.0
5.0 V
±200 nA
25 μA
1 mA
20
24 mΩ
V_DSS = 300V
I_D25 = 110A
R_DS(on) ≤ 24mΩ
t_rr
≤ 200ns
miniBLOC, SOT-227 B
E153432
S
G
S
D
G = Gate
S = Source
D = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
• Fast intrinsic diode
• Avalanche Rated
• Low R_DS(ON) and Q_G
• Low package inductance
Advantages
• Easy to mount
• Space savings
• High power density
Applications
• DC-DC coverters
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• AC and DC motor control
• Uninterrupted power supplies
• High speed power switching
applications
© 2008 IXYS CORPORATION, All rights reserved
DS99571F(05/08)