IXFN140N20P Datasheet, PDF (1/5 Pages) IXYS Corporation – PolarHT HiPerFET Power MOSFET

PolarHT^TM HiPerFET IXFN 140N20P
Power MOSFET
N-Channel Enhancement Mode
Fast Intrinsic Diode
V = 200 V
DSS
I_D25 = 115 A
≤ R_DS(on) 18 mΩ
t_rr ≤ 150 ns
Symbol
V
DSS
V_DGR
V
GS
V_GSM
I_D25
I_D(RMS)
I_DM
I_AR
E_AR
E_AS
dv/dt
P_D
T_J
T_JM
T_stg
T_L
V_ISOL
M_d
Weight
Test Conditions
T
J
= 25°C to 175°C
T_J = 25°C to 175°C; R_GS = 1 MΩ
Continuous
Transient
T_C = 25°C
External lead current limit
T_C = 25°C, pulse width limited by T_JM
T_C = 25°C
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, di/dt ≤ 100 A/μs, V_DD ≤ V_DSS,
T_J ≤ 150°C, R_G = 4 Ω
T_C = 25°C
1.6 mm (0.062 in.) from case for 10 s
50/60 Hz, RMS, 1 minute
Terminal torque
Mounting torque
Maximum Ratings
200
V
200
V
±20
V
±30
V
115
A
100
A
280
A
60
A
100
mJ
4
J
10
V/ns
680
W
-55 ... +175
°C
175
°C
-55 ... +150
°C
300
°C
2500
V~
1.13/10 Nm/lb.in.
1.13/10 Nm/lb.in.
30
g
miniBLOC, SOT-227 B (IXFN)
E153432
S
G
S
D
G = Gate
S = Source
D = Drain
Either source tab S can be used forsource
current or Kelvin gate return.
Features
z _{International standard package}
z _{Unclamped Inductive Switching (UIS)}
rated
z _{Low package inductance}
- easy to drive and to protect
z _{Fast intrinsic diode}
Symbol
Test Conditions
(T
J
=
25°C,
unless
otherwise
specified)
BV_DSS
V_GS = 0 V, I_D = 250 μA
Characteristic Values
Min. Typ. Max.
200
V
V_GS(th)
V_DS = V_GS, I_D = 4 mA
2.5
5.0 V
I
GSS
V
GS
=
±20
V,
DC
V
DS
=
0
±100 nA
I_DSS
V_DS = V_DSS
V_GS = 0 V
T_J = 150°C
25 μA
250 μA
R_DS(on)
V_GS = 10 V, I_D = 70 A
V_GS = 15 V, I_D = 140A
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
18 mΩ
14
mΩ
Advantages
z _{Easy to mount}
z _{Space savings}
z _{High power density}
© 2006 IXYS All rights reserved
DS99245E(03/06)