IXFN132N50P3 Datasheet, PDF (1/5 Pages) IXYS Corporation – Polar3 HiPerFET Power MOSFET

Advance Technical Information
Polar3^TM HiPerFET^TM
Power MOSFET
IXFN132N50P3
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
Symbol
V_DSS
V_DGR
V_GSS
V_GSM
I_D25
I_DM
I_A
E_AS
dv/dt
P_D
T_J
T_JM
T_stg
V_ISOL
M_d
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C, R_GS = 1MΩ
Continuous
Transient
T_C = 25°C
T_C = 25°C, Pulse Width Limited by T_JM
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, V_DD ≤ V_DSS, T_J ≤ 150°C
T_C = 25°C
50/60 Hz, RMS, t = 1minute
I_ISOL ≤ 1mA,
t = 1s
Mounting Torque for Base Plate
Terminal Connection Torque
Maximum Ratings
500
V
500
V
±30
V
±40
V
112
A
330
A
66
A
3
J
35
1500
-55 ... +150
150
-55 ... +150
V/ns
W
°C
°C
°C
2500
3000
1.5/13
1.3/11.5
30
V~
V~
Nm/lb.in.
Nm/lb.in.
g
V_DSS =
I_D25 =
≤ R_DS(on)
t_rr
≤
500V
112A
39mΩ
250ns
miniBLOC
E153432
S
G
S
D
G = Gate
S = Source
D = Drain
Either Source Terminal S can be used as
the Source Terminal or the Kelvin Source
(Gate Return) Terminal.
Features
z _{International Standard Package}
z _{miniBLOC with Aluminum Nitride}
Isolation
z _{Avalanche Rated}
z _{Low Package Inductance}
z _{Fast Intrinsic Rectifier}
z _{Low RDS(on) and QG}
Advantages
z _{Easy to Mount}
z _{Space Savings}
Symbol
Test Conditions
(T_J = 25°C Unless Otherwise Specified)
BV_DSS
V_GS = 0V, I_D = 3mA
V_GS(th)
V_DS = V_GS, I_D = 8mA
I_GSS
V_GS = ±30V, V_DS = 0V
I_DSS
V_DS = V_DSS, V_GS = 0V
T_J = 125°C
R_DS(on)
V_GS = 10V, I_D = 66A, Note 1
Characteristic Values
Min. Typ. Max.
500
V
3.0
5.0 V
±200 nA
50 μA
6 mA
39 mΩ
Applications
z _{DC-DC Converters}
z _{Battery Chargers}
z _{Switch-Mode and Resonant-Mode}
Power Supplies
z _{Uninterrupted Power Supplies}
z _{AC Motor Drives}
z _{High Speed Power Switching}
Applications
© 2011 IXYS CORPORATION, All Rights Reserved
DS100316(03/11)