IXFN120N20 Datasheet, PDF (1/2 Pages) IXYS Corporation – HiPer FET Power MOSFETs

HiPerFET^TM
Power MOSFETs
Single MOSFET Die
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t_rr
IXFN 120N20
V_DSS =
I_D25 =
= R_DS(on)
200 V
120 A
17 mW
t_rr £ 250 ns
Preliminary data sheet
Symbol
V_DSS
V_DGR
V_GS
V_GSM
I_D25
I_DM
I
AR
E_AR
E_AS
dv/dt
P
D
T_J
T_JM
T
stg
T_L
V_ISOL
M_d
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GS = 1 MW
Continuous
Transient
T_C = 25°C
T_C = 25°C, pulse width limited by T_JM
T
C
= 25°C
T_C = 25°C
T_C = 25°C
I_S £ I_DM, di/dt £ 100 A/ms, V_DD £ V_DSS
T_J £ 150°C, R_G = 2 W
T
C
= 25°C
1.6 mm (0.063 in.) from case for 10 s
50/60 Hz, RMS t = 1 min
I_ISOL £ 1 mA
t=1s
Mounting torque
Terminal connection torque
Maximum Ratings
200
V
200
V
±20
V
±30
V
120
A
480
A
120
A
64
mJ
3
J
5 V/ns
600
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
-
°C
2500
V~
3000
V~
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
30
g
miniBLOC, SOT-227 B (IXFN)
E153432
S
G
S
D
G = Gate
S = Source
D = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
• Encapsulating epoxy meets
UL 94 V-0, flammability classification
• International standard package
• miniBLOC, with Aluminium nitride
isolation
• Low R_{DS (on)} HDMOS^TM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
• Low package inductance
• Fast intrinsic Rectifier
Symbol
V
DSS
V
GS(th)
I_GSS
I
DSS
R_DS(on)
Test Conditions
V = 0 V, I = 3mA
GS
D
V = V , I = 8mA
DS
GS D
V_GS = ±20 V, V_DS = 0
V =V
DS
DSS
V_GS = 0 V
V_GS = 10 V, I_D = 0.5 • I_D25
Note 1
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
200
V
2
4V
±200 nA
T=
J
25°C
T_J = 125°C
100 mA
2 mA
17 mW
Applications
• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• Temperature and lighting controls
• Low voltage relays
Advantages
• Easy to mount
• Space savings
• High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
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