IXFN106N20 Datasheet, PDF (1/4 Pages) IXYS Corporation – HiPerFET Power MOSFETs

HiPerFET^TM
Power MOSFETs
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t_rr
Symbol
Test Conditions
V_DSS
V_DGR
V_GS
V_GSM
I_D25
I
D80
I
DM
I
AR
E_AR
dv/dt
P_D
T
J
T_JM
T_stg
T_L
V_ISOL
M_d
Weight
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GS = 1 MW
Continuous
Transient
T_C = 25°C, Chip capability
T
C
= 80°C, limited by external leads
T
C
=
25°C,
pulse
width
limited
by
T
JM
T
C
= 25°C
T_C = 25°C
I_S £ I_DM, di/dt £ 100 A/ms, V_DD £ V_DSS,
T_J £ 150°C, R_G = 2 W
T_C = 25°C
1.6 mm (0.063 in) from case for 10 s
50/60 Hz, RMS t = 1 min
I
ISOL
£
1
mA
t=1s
Mounting torque
Terminal connection torque
IXFK 90 N 20
IXFN 100 N 20
IXFN 106 N 20
Maximum Ratings
IXFK
IXFN IXFN
90N20 100N20 106N20
200
200 200 V
200
200 200 V
±20
±20
20 V
±30
±30
20 V
90 
76
360
50
100 106 A
-
A
400 424 A
50
A
30
30 30 mJ
5
5 5 V/ns
500
520
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
-
°C
-
2500
V~
-
3000
V~
0.9/6
-
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
10
30
g
Symbol
V_DSS
V_GH(th)
I_GSS
I_DSS
R
DS(on)
Test Conditions
V_GS = 0 V, I_D = 1 mA
V_DS = V_GS, I_D = 8 mA
V_GS = ±20 V_DC, V_DS = 0
V_DS = 0.8 • V_DSS
V_GS = 0 V
V = 10 V, I = 0.5 • I
GS
D
D25
Pulse test, t £ 300 ms,
duty cycle d £ 2 %
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
200
2
T_J = 25°C
T_J = 125°C
V
4V
±200 nA
400 mA
2 mA
IXFK90N20
IXFN100N20
IXFN106N20
0.023 W
0.023 W
0.020 W
V
I
DSS
D25
200 V 90 A
200 V 100 A
200 V 106 A
t_rr £ 200 ns
TO-264 AA
TO-264 AA (IXFK)
R
DS(on)
23 mW
23 mW
20 mW
G
D
S
miniBLOC, SOT-227 B (IXFN)
E153432
S
D
G
(TAB)
G
S
S
S
D
G = Gate
S = Source
D = Drain
TAB = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
l _{International standard packages}
q _{JEDEC TO-264 AA, epoxy meet}
UL 94 V-0, flammability classification
q _{miniBLOC with Aluminium nitride}
isolation
q _{Low R HDMOS}TM _process
DS (on)
q _{Rugged polysilicon gate cell structure}
q _{Unclamped Inductive Switching (UIS)}
rated
q _{Low package inductance}
q _{Fast intrinsic Rectifier}
Applications
q _{DC-DC converters}
q _{Synchronous rectification}
q _{Battery chargers}
q _{Switched-mode and resonant-mode}
power supplies
q _{DC choppers}
q _{Temperature and lighting controls}
q _{Low voltage relays}
Advantages
q _{Easy to mount}
q _{Space savings}
q _{High power density}
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
92804H (7/97)
1-4