IXFN102N30P Datasheet, PDF (1/5 Pages) IXYS Corporation – PolarHV HiPerFET Power MOSFET

PolarHV^TM HiPerFET ^{IXFN 102N30P}
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
V=
DSS
I_D25 =
≤ R_DS(on)
t_rr
≤
300 V
86 A
33 mΩ
200 ns
Symbol
V_DSS
V_DGR
V
GS
V_GSM
I_D25
I_L
I
DM
I_AR
E_AR
E
AS
dv/dt
P_D
T
J
T_JM
T_stg
T_L
V_ISOL
M
d
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GS = 1 MΩ
Continuous
Transient
T_C = 25°C
Lead Current Limit, RMS
T
C
=
25°C,
pulse
width
limited
by
T
JM
T_C = 25°C
T_C = 25°C
T
C
= 25°C
I_S ≤ I_DM, di/dt ≤ 100 A/μs, V_DD ≤ V_DSS,
T_J ≤ 150°C, R_G = 4 Ω
T_C = 25°C
1.6 mm (0.062 in.) from case for 10 s
50/60 Hz, RMS
I_ISOL ≤ 1 mA
Mounting torque
Terminal connection torque
t = 1 min
t=1s
Maximum Ratings
300
V
300
V
± 20
V
± 30
V
miniBLOC, SOT-227 B (IXFN)
E153432
S
G
86
A
100
A
250
A
S
D
88
A _{G = Gate}
D = Drain
60
mJ _{S = Source}
5
J
Either Source terminal S can be used as the
10
V/ns Source terminal or the Kelvin Source (gate
return) terminal.
570
-55 ... +150
150
-55 ... +150
W
°C
°C
°C Features
300
°C
2500
V~
3000
V~
1.5 / 13 Nm/lb.in.
1.5 / 13 Nm/lb.in.
30
g
z _{International standard package}
z _{Encapsulating epoxy meets}
UL 94 V-0, flammability classification
z _{miniBLOC with Aluminium nitride}
isolation
z _{Fast recovery diode}
z _{Unclamped Inductive Switching (UIS)}
rated
z _{Low package inductance}
- easy to drive and to protect
Symbol
Test Conditions
(T
J
=
25°C
unless
otherwise
specified)
BV_DSS
V_GS = 0 V, I_D = 250 μA
V_GS(th)
V_DS = V_GS, I_D = 4 mA
I
GSS
V
GS
=
±
20
V,
DC
V
DS
=
0
I_DSS
V_DS = V_DSS
V_GS = 0 V
T_J = 125°C
R_DS(on)
V_GS = 10 V, I_D = 0.5 I_D25, Note 1
Characteristic Values
Min. Typ. Max.
300
V
2.5
5.0 V
± 200 nA
25 μA
250 μA
33 mΩ
Advantages
z _{Easy to mount}
z _{Space savings}
z _{High power density}
© 2006 IXYS All rights reserved
DS99248E(06/06)