IXFN100N50P Datasheet, PDF (1/5 Pages) IXYS Corporation – PolarHV HiPerFET Power MOSFET

PolarHV^TM HiPerFET ^{IXFN 100N50P}
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
V = 500 V
DSS
I
= 90 A
D25
≤ R_DS(on) 49 mΩ
t_rr
≤ 200 ns
Symbol
V
DSS
V_DGR
V_GSS
V_GSM
I_D25
I_DRMS
I_DM
I_AR
E_AR
E_AS
dv/dt
P_D
T
J
T_JM
T_stg
T
L
V_ISOL
M
d
Weight
Test Conditions
T
J
= 25° C to 150° C
T_J = 25° C to 150° C; R_GS = 1 MΩ
Continuous
Transient
T_C = 25° C
External lead current limit
T_C = 25° C, pulse width limited by T_JM
T_C = 25° C
T_C = 25° C
T_C = 25° C
I_S ≤I_DM, di/dt ≤100 A/µs, V_DD ≤V_DSS,
T_J ≤150° C, R_G = 2 Ω
T_C = 25° C
1.6 mm (0.062 in.) from case for 10 s
50/60 Hz, RMS
t = 1 min
I_ISOL ≤1 mA
t=1s
Mounting torque
Terminal connection torque
SOT-227B
Maximum Ratings
500
V
500
V
miniBLOC, SOT-227 B (IXFN)
E153432
S
G
±30
V
±40
V
90
A
75
A
S
D
250
A
G = Gate
D = Drain
100
A _{S = Source}
100
mJ _{Either Source terminal S can be used as the}
5
J ^{Source terminal or the Kelvin Source (gate}
return) terminal.
20
V/ns
1040
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
2500
V~
3000
V~
1.5 / 13 Nm/lb.in.
1.5 / 13 Nm/lb.in.
30
g
Features
• International standard package
• Encapsulating epoxy meets
UL 94 V-0, flammability classification
• miniBLOC with Aluminium nitride
isolation
l _{Fast recovery diode}
l _{Unclamped Inductive Switching (UIS)}
rated
l _{Low package inductance}
- easy to drive and to protect
Symbol
Test Conditions
(T_J = 25° C, unless otherwise specified)
BV_DSS
V_GS = 0 V, I_D = 3 mA
V
GS(th)
V = V , I = 8 mA
DS
GS D
I_GSS
V_GS = ±30 V_DC, V_DS = 0
I_DSS
V_DS = V_DSS
V_GS = 0 V
R_DS(on)
V_GS = 10 V, I_D = I_T, Note 1
Characteristic Values
Min. Typ. Max.
500
V
3.0
5.0 V
Advantages
l _{Easy to mount}
l _{Space savings}
l _{High power density}
±200 nA
T_J = 125° C
25 µA
2000 µA
49 m Ω
© 2006 IXYS All rights reserved
DS99497E(01/06)