IXFN100N25 Datasheet, PDF (1/2 Pages) IXYS Corporation – N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low

IXFN 100N25
Symbol
g
fs
C_iss
C_oss
C
rss
t_d(on)
t_r
t_d(off)
t
f
Q_g(on)
Q_gs
Q_gd
R_thJC
R
thCK
Test Conditions
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
V = 10 V; I = 0.5 • I
Note 1
40 70
S
DS
D
D25
9100
pF
V_GS = 0 V, V_DS = 25 V, f = 1 MHz
1800
pF
600
pF
42
ns
V_GS = 10 V, V_DS = 0.5 • V_DSS, I_D = 0.5 • I_D25
55
ns
R_G = 1 W (External),
110
ns
40
ns
300
nC
V_GS = 10 V, V_DS = 0.5 • V_DSS, I_D = 0.5 • I_D25
57
nC
160
nC
0.22 K/W
0.05
K/W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
I_S
V_GS = 0 V
I_SM
Repetitive;
pulse width limited by T_JM
V_SD
I_F = I_S, V_GS = 0 V, Note 1
t_rr
Q_RM
I_F = 50A,-di/dt = 100 A/ms, V_R = 100 V
I_RM
100 A
400 A
1.5 V
250 ns
1.4
mC
10
A
Note: 1. Pulse test, t £ 300 ms, duty cycle d £ 2 %
miniBLOC, SOT-227 B
M4 screws (4x) supplied
Dim.
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
Q
R
S
T
U
Millimeter
Min. Max.
31.50 31.88
7.80 8.20
4.09 4.29
4.09 4.29
4.09 4.29
14.91 15.11
30.12 30.30
38.00 38.23
11.68 12.22
8.92 9.60
0.76 0.84
12.60 12.85
25.15 25.42
1.98 2.13
4.95 5.97
26.54 26.90
3.94 4.42
4.72 4.85
24.59 25.07
-0.05 0.1
Inches
Min. Max.
1.240 1.255
0.307 0.323
0.161 0.169
0.161 0.169
0.161 0.169
0.587 0.595
1.186 1.193
1.496 1.505
0.460 0.481
0.351 0.378
0.030 0.033
0.496 0.506
0.990 1.001
0.078 0.084
0.195 0.235
1.045 1.059
0.155 0.174
0.186 0.191
0.968 0.987
-0.002 0.004
© 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
2-2