IXFL82N60P Datasheet, PDF (1/5 Pages) IXYS Corporation – PolarHV HiPerFET Power MOSFET ISOPLUS264

PolarHV^TM HiPerFET
Power MOSFET
ISOPLUS264^TM
(Electrically Isolated Back Surface)
IXFL 82N60P
V = 600 V
DSS
I = 82 A
D25
≤ R_DS(on) 78 mΩ
t_rr
≤ 200 ns
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
Test Conditions
ISOPLUS264 ^TM (IXFL)
Maximum Ratings
V_DSS
V
DGR
V_GSS
V_GSM
I_D25
I_DM
I_AR
E_AR
E_AS
dv/dt
P_D
T_J
T
JM
T_stg
T_L
V_ISOL
F_C
Weight
T_J = 25° C to 150° C
T
J
=
25°
C
to
150°
C;
R
GS
=
1
MΩ
Continuous
Transient
T_C = 25° C
T_C = 25° C, pulse width limited by T_JM
T_C = 25° C
T_C = 25° C
T_C = 25° C
I
S
≤
I,
DM
di/dt
≤ 100
A/µs,
V
DD
≤
V,
DSS
T_J ≤150° C, R_G = 2 Ω
T_C = 25° C
1.6 mm (0.062 in.) from case for 10 s
600
600
±30
±40
55
200
82
100
5
20
625
-55 ... +150
150
-55 ... +150
300
50/60 Hz, RMS
I_ISOL ≤1 mA
Mounting force
t = 1 min
t=1s
2500
3000
28..150 / 6.4..30
10
V
V
V
G
D
S
V
(Isolated Tab)
A
A
A
mJ
J
V/ns
W
°C
°C
°C
°C
V~
V~
N/lb
G = Gate
S = Source
D = Drain
Features
l _{International standard isolated}
package
l _{UL recognized package}
l _{Silicon chip on Direct-Copper-Bond}
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
l _{Unclamped Inductive Switching (UIS)}
rated
l _{Low package inductance}
- easy to drive and to protect
l _{Fast intrinsic diode}
g _Advantages
Symbol
Test Conditions
(T_J = 25° C, unless otherwise specified)
BV_DSS
V_GS = 0 V, I_D = 3 mA
V
GS(th)
V = V , I = 8 mA
DS
GS D
I_GSS
V_GS = ±30 V_DC, V_DS = 0
I_DSS
V_DS = V_DSS
V_GS = 0 V
R_DS(on)
V_GS = 10 V, I_D = I_T, Note 1
Characteristic Values
Min. Typ. Max.
600
V
l _{Easy to mount}
l _{Space savings}
l _{High power density}
3.0
5.0 V
±200 nA
T_J = 125° C
25 µA
1000 µA
78 m Ω
© 2006 IXYS All rights reserved
DS99531E(02/06)