IXFL70N60Q2 Datasheet, PDF (1/4 Pages) IXYS Corporation – HiPerFET Power MOSFET Q2-Class

HiPerFET^TM Power
MOSFET Q2-Class
(Electrically Isolated Tab)
IXFL70N60Q2
N-Channel Enhancement Mode
Avalanche Rated, Low Q_g, Low Intrinsic R_G
High dV/dt, Low t_rr
V_DSS =
I_D25 =
R_DS(on) ≤
t_rr
≤
600V
37A
92mΩ
250ns
ISOPLUS264
Symbol
V_DSS
V_DGR
V_GSS
V_GSM
I_D25
I_DM
I_A
E_AS
dV/dt
P_D
T_J
T_JM
T_stg
T_L
T
SOLD
F_C
V_ISOL
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C, R_GS = 1MΩ
Continuous
Transient
T_C = 25°C
T_C = 25°C, Pulse Width Limited by T_JM
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, V_DD ≤ V_DSS, T_J ≤ 150°C
T_C = 25°C
1.6 mm (0.063 in.) from Case for 10s
Plastic body for 10s
Mounting Force
50/60 Hz, RMS t = 1 min
I_ISOL ≤ 1 mA
t=1s
Maximum Ratings
600
V
600
V
± 30
V
± 40
V
37
A
280
A
35
A
5
J
20
V/ns
360
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
260
°C
40..120 / 9..27
N/lb.
2500
V~
3000
V~
8
g
Symbol
Test Conditions
(T_J = 25°C, Unless Otherwise Specified)
BV_DSS
V_GS = 0 V, I_D = 1mA
V_GS(th)
V_DS = V_GS, I_D = 8mA
I_GSS
V_GS = ±30 V, V_DS = 0V
I_DSS
V_DS = V_DSS, V_GS = 0V
R_DS(on)
V_GS = 10V, I_D = 35A, Note 1
T_J = 125°C
Characteristic Values
Min. Typ. Max.
600
V
3.0
5.5 V
± 200 nA
100 μA
5 mA
92 mΩ
G
D
S
G = Gate
S = Source
ISOLATED TAB
D = Drain
Features
z _{Silicon Chip on Direct-Copper Bond}
(DCB) Substrate
z _{Isolated Mounting Surface}
z _{2500V Electrical Isolation}
z _{Fast Intrinsic Diode}
z _{Avalanche Rated}
z _{Low QG}
z _{Low Package Inductance}
Advantages
z _{High Power Density}
z _{Easy to Mount}
z _{Space Savings}
Applications
z _{DC-DC Converters}
z _{Battery Chargers}
z _{Switched-Mode and Resonant-Mode}
Power Supplies
z _{DC Choppers}
z _{Temperature and Lighting Controls}
© 2009 IXYS CORPORATION, All Rights Reserved
DS100068A(06/09)