IXFL60N60 Datasheet, PDF (1/2 Pages) IXYS Corporation – Single Die MOSFET

HiPerFET^TM Power MOSFETs
ISOPLUS264^TM
IXFL 60N60
(Electrically Isolated Backside)
Single Die MOSFET
V_DSS
I_D25
R_DS(on)
= 600 V
= 60 A
= 80 mΩ
Preliminary Data Sheet
Symbol
V_DSS
V_DGR
V_GS
V_GSM
I_D25
I_DM
I_AR
E_AR
E_AS
dv/dt
P_D
F_C
T_J
T_JM
T_stg
V_ISOL
M_d
Weight
Symbol
V_DSS
V_GH(th)
I_GSS
I_DSS
R_DS(on)
Test Conditions
T_J= 25°C to 150°C
T_J= 25°C to 150°C; R_GS = 1 MΩ
Continuous
Transient
T_C= 25°C, Chip capability
T_C= 25°C, pulse width limited by T_JM
T_C= 25°C
T_C= 25°C
T_C= 25°C
I_S ≤ I_DM, di/dt ≤ 100 A/µs, V_DD ≤ V_DSS,
T_J ≤ 150°C, R_G = 2 Ω
T_C= 25°C
Mouting Force
50/60 Hz, RMS t = 1 min
I_ISOL ≤ 1 mA
t=1s
Mounting torque
Terminal connection torque
Maximum Ratings
600
V
600
V
±20
V
±30
V
60
A
240
A
60
A
64
mJ
4
J
5 V/ns
700
W
30...150/7...33
N/lb
-55 ... +150
°C
150
°C
-55 ... +150
°C
2500
V~
3000
V~
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
8
g
Test Conditions
V_GS = 0 V, I_D = 3 mA
V_DS = V_GS, I_D = 8 mA
V_GS = ±20 V_DC, V_DS = 0
V_DS = V_DSS
V_GS = 0 V
V_GS = 10 V, I_D = I_T
Notes 1, 2
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
600
V
2.0
4.0 V
T_J = 25°C
T_J = 125°C
±200 nA
100 µA
2 mA
80 mΩ
ISOPLUS-264^TM
G
DS
(Backside)
G = Gate
D = Drain
S = Source
Features
z _{Silicon chip on Direct-Copper-Bond}
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
z _{Low drain to tab capacitance(<30pF)}
z _{Low RDS (on) HDMOS}TM _process
z _{Rugged polysilicon gate cell structure}
z _{Unclamped Inductive Switching (UIS)}
rated
z _{Fast intrinsic Rectifier}
Applications
z _{DC-DC converters}
z _{Battery chargers}
z _{Switched-mode and resonant-mode}
power supplies
z _{DC choppers}
z _{AC motor control}
Advantages
z _{Easy assembly}
z _{Space savings}
z _{High power density}
© 2003 IXYS All rights reserved
DS99093(10/03)