IXFL44N80 Datasheet, PDF (1/2 Pages) IXYS Corporation – HiPerFET Power MOSFETs ISOPLUS264

HiPerFET^TM Power MOSFETs
ISOPLUS264^TM
(Electrically Isolated Backside)
Single Die MOSFET
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t_rr
IXFL 44N80
V_DSS = 800 V
I_D25 = 44 A
R_DS(on) = 0.165 Ω
Preliminary Data Sheet
Symbol
V_DSS
V_DGR
V_GS
V_GSM
I_D25
I_DM
I_AR
E_AR
E_AS
dv/dt
P_D
T_J
T_JM
T_stg
T_L
V_ISOL
Weight
Symbol
V_DSS
V_GS(th)
I_GSS
I_DSS
R_DS(on)
Test Conditions
TT_JJ
= 25°C to 150°C
= 25°C to 150°C; R_GS = 1 MΩ
Continuous
Transient
T_C = 25°C
TT_CC
= 25°C, Note 1
= 25°C
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, di/dt ≤ 100 A/µs, V_DD ≤ V_DSS
T_J ≤ 150°C, R_G = 2 Ω
T_C = 25°C
1.6 mm (0.063 in.) from case for 10 s
50/60 Hz, RMS t = 1 min
I_ISOL ≤ 1 mA
t=1s
Maximum Ratings
800
V
800
V
±20
V
±30
V
44
A
176
A
44
A
64
mJ
4
J
5 V/ns
550
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
2500
V~
3000
V~
5
g
Test Conditions
V_GS = 0 V, I_D = 3mA
V_DS = V_GS, I_D = 8mA
V_GS = ±20 V_DC, V_DS = 0
V_DS = V_DSS
V_GS = 0 V
V_GS = 10 V, I_D = I_T
Note 1
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
800
V
2.0
4.0 V
±100 nA
T_J = 25°C
T_J = 125°C
100 µA
2 mA
0.165 Ω
ISOPLUS-264^TM
G
C
E
(TAB)
G = Gate
C = Collector
E = Emitter Tab = Collector
Features
z _{Silicon chip on Direct-Copper-Bond}
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
z _{Low drain to tab capacitance(<30pF)}
z _{Low RDS (on) HDMOS}TM _process
z _{Rugged polysilicon gate cell structure}
z _{Unclamped Inductive Switching (UIS)}
rated
z _{FastintrinsicRectifier}
Applications
z _{DC-DC converters}
z _{Battery chargers}
z _{Switched-mode and resonant-mode}
power supplies
z _{DC choppers}
z _{AC motor control}
Advantages
z _{Easy assembly}
z _{Space savings}
z _{High power density}
© 2003 IXYS All rights reserved
DS99085(09/03)