IXFL44N60 Datasheet, PDF (1/2 Pages) IXYS Corporation – HiPerFET Power MOSFETs Single Die MOSFET

HiPerFET^TM
Power MOSFETs
Single Die MOSFET
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t_rr
IXFL 44N60
V=
DSS
I_D25 =
= R_DS(on)
600 V
41 A
130 mΩ
t_rr ≤ 250 ns
Preliminary data sheet
Symbol
V_DSS
V_DGR
V_GS
V_GSM
I_D25
I_DM
I_AR
E_AR
E_AS
dv/dt
P_D
T_J
T_JM
T_stg
T_J
V_ISOL
M_d
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GS = 1 MΩ
Continuous
Transient
T_C = 25°C
T_C = 25°C, pulse width limited by T_JM
T_C = 25°C
TT_CC
= 25°C
= 25°C
TI^SJ
≤
≤
1I^D5^M0,°^{dCi/,dRt ≤}_G
100 A/µs,
=2Ω
V_DD
≤
V_DSS,
T_C = 25°C
1.6 mm (0.63 in) from case for 10 s
50/60 Hz, RMS t = 1 min
I_ISOL ≤ 1 mA
t=1s
Mounting torque
Terminal connection torque
Maximum Ratings
600
V
600
V
±20
V
±30
V
41
A
176
A
44
A
60
mJ
3
J
5 V/ns
500
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
-
°C
2500
V~
3000
V~
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
8
g
Symbol
V_DSS
V_GH(th)
I_GSS
I_DSS
R_DS(on)
Test Conditions
V_GS = 0 V, I_D = 3 mA
V_DS = V_GS, I_D = 8 mA
V_GS = ±20 V_DC, V_DS = 0
V_DS = V_DSS
V_GS = 0 V
V_GS = 10 V, I_D = I_T
Notes 1, 2
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
600
V
2.5
4.5 V
T_J = 25°C
T_J = 125°C
±200 nA
100 µA
2 mA
130 mΩ
ISOPLUS-264^TM
G
DS
(Backside)
G = Gate
D = Drain
S = Source
Features
z _{Silicon chip on Direct-Copper-Bond}
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
z _{Low drain to tab capacitance(<30pF)}
z _{Low RDS (on) HDMOSTM process}
z _{Rugged polysilicon gate cell structure}
z _{Unclamped Inductive Switching (UIS)}
rated
z _{Fast intrinsic Rectifier}
Applications
z _{DC-DC converters}
z _{Battery chargers}
z _{Switched-mode and resonant-mode}
power supplies
z _{DC choppers}
z _{AC motor control}
Advantages
z _{Easy assembly}
z _{Space savings}
z _{High power density}
© 2003 IXYS All rights reserved
DS99092(10/03)