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IXFL44N100P Datasheet, PDF (1/4 Pages) IXYS Corporation – Polar Power MOSFET HiPerFET | |||
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PolarTM Power MOSFET
HiPerFETTM
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFL44N100P
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IAR
EAS
dV/dt
PD
TJ
TJM
Tstg
TL
TSOLD
VISOL
FC
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
Continuous
Transient
Maximum Ratings
1000
V
1000
V
± 30
V
± 40
V
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
22
A
110
A
22
A
2
J
IS ⤠IDM, VDD ⤠VDSS, TJ ⤠150°C
TC = 25°C
15
357
-55 ... +150
150
-55 ... +150
V/ns
W
°C
°C
°C
Maximum lead temperature for soldering
Plastic body for 10s
300
°C
260
°C
50/60 Hz, RMS, 1 minute
2500
V~
IISOL ⤠1mA
Mounting force
t = 1s
3000
40..120/4.5..27
V~
N/lb.
8
g
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
BVDSS
VGS = 0V, ID = 3mA
VGS(th)
VDS = VGS, ID = 1mA
IGSS
VGS = ± 30V, VDS = 0V
IDSS
VDS = VDSS
VGS = 0V
TJ = 125°C
RDS(on)
VGS = 10V, ID = 22A, Note 1
Characteristic Values
Min. Typ. Max.
1000
V
3.5
6.5 V
± 200 nA
50 μA
3 mA
240 mΩ
VDSS =
ID25 =
⤠RDS(on)
trr
â¤
1000V
22A
240mΩ
300ns
ISOPLUS i5-PakTM (HV)
G
S
D
G = Gate
S = Source
D = Drain
Features
⢠Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
⢠Low drain to tab capacitance(<30pF)
⢠Rugged polysilicon gate cell structure
⢠Unclamped Inductive Switching (UIS)
rated
⢠Fast intrinsic Rectifier
Applications
⢠Switched-mode and resonant-mode
power supplies
⢠DC-DC converters
⢠Laser Drivers
⢠AC and DC motor controls
⢠Robotics and servo controls
Advantages
⢠Easy assembly
⢠Space savings
⢠High power density
© 2008 IXYS CORPORATION, All rights reserved
DS99893A(4/08)
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