IXFL39N90 Datasheet, PDF (1/2 Pages) IXYS Corporation – HiPerFET Power MOSFETs ISOPLUS264

HiPerFET^TM Power MOSFETs ^{IXFL 39N90}
ISOPLUS264^TM
(Electrically Isolated Backside)
Single Die MOSFET
V_DSS = 900 V
I_D25 = 34 A
R_DS(on) = 220 mΩ
t
< ns
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t_rr
Preliminary Data Sheet
Symbol
Test Conditions
Maximum Ratings _ISOPLUS-264^TM
V_DSS
V_DGR
V_GS
V_GSM
I_D25
I_DM
I_AR
E_AR
E_AS
dv/dt
P_D
T_J
T_JM
T_stg
V_ISOL
Weight
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GS = 1 MΩ
Continuous
Transient
T_C = 25°C, Chip capability
T_C = 25°C, Note 1
T_C = 25°C
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, di/dt ≤ 100 A/µs, V_DD ≤ V_DSS
T_J ≤ 150°C, R_G = 2 Ω
T_C = 25°C
50/60 Hz, RMS t = 1 min
I_ISOL ≤ 1 mA
t=1s
900
900
±20
±30
34
154
39
64
4
5
580
-40 ... +150
150
-40 ... +150
2500
3000
8
V
V
V
V
A
A
A
mJ
J
V/ns
W
°C
°C
°C
V~
V~
g
G
DS
(Backside)
G = Gate
D = Drain
S = Source
Features
z _{Silicon chip on Direct-Copper-Bond}
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
z _{Low drain to tab capacitance(<30pF)}
z _{Low RDS (on) HDMOSTM process}
z _{Rugged polysilicon gate cell structure}
z _{Unclamped Inductive Switching (UIS)}
rated
z _{Fast intrinsic Rectifier}
Applications
Symbol
V_DSS
V_GH(th)
I_GSS
I_DSS
R_DS(on)
Test Conditions
V_GS = 0 V, I_D = 3 mA
V_DS = V_GS, I_D = 8 mA
V_GS = ±20 V_DC, V_DS = 0
V_DS = V_DSS
V_GS = 0 V
V_GS = 10 V, I_D = I_T
Notes 2, 3
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
900
V
2.5
5.0 V
T_J = 25°C
T_J = 125°C
±200 nA
100 µA
2 mA
220 mΩ
z _{DC-DC converters}
z _{Battery chargers}
z _{Switched-mode and resonant-mode}
power supplies
z _{DC choppers}
z _{AC motor control}
Advantages
z _{Easy assembly}
z _{Space savings}
z _{High power density}
© 2003 IXYS All rights reserved
DS99094(10/03)