IXFL38N100Q2 Datasheet, PDF (1/4 Pages) IXYS Corporation – HiPerFET Power MOSFET Q2-Class

HiPerFET^TM
Power MOSFET
Q2-Class
IXFL38N100Q2
N-Channel Enhancement Mode
Avalanche Rated, Low Q_g, Low Intrinsic R_G
High dV/dt, Low t_rr
Symbol
V_DSS
V_DGR
V_GSS
V_GSM
I_D25
I_DM
I_A
E_AS
dV/dt
P_D
T_J
T_JM
T_stg
T_L
T
SOLD
F_C
V_ISOL
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C, R_GS = 1MΩ
Continuous
Transient
T_C = 25°C
T_C = 25°C, pulse width limited by T_JM
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, V_DD ≤ V_DSS, T_J ≤ 150°C
T_C = 25°C
1.6 mm (0.063 in.) from case for 10s
Plastic body for 10s
Mounting force
50/60 Hz, RMS t = 1 min
I_ISOL ≤ 1 mA
t=1s
Maximum Ratings
1000
V
1000
V
± 30
V
± 40
V
29
A
152
A
38
A
5
J
20
V/ns
380
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
260
°C
30..120/6.7..27
N/lbs
2500
V~
3000
V~
10
g
Symbol
BV_DSS
V_GS(th)
I_GSS
I_DSS
R_DS(on)
Test Conditions
Characteristic Values
(T_J = 25°C, unless otherwise specified)
Min. Typ. Max.
V_GS = 0 V, I_D = 1mA
1000
V
V_DS = V_GS, I_D = 8mA
3.0
5.5 V
V_GS = ±30 V, V_DS = 0V
V_DS = V_DSS
V_GS = 0V
T_J = 125°C
± 200 nA
100 μA
5 mA
V_GS = 10V, I_D = 19A, Note 1
280 mΩ
V_DSS =
I_D25 =
R_DS(on) ≤
t_rr
≤
1000V
29A
280mΩ
300ns
ISOPLUS264^TM( IXFL)
G
D
S
Isolated Tab
G = Gate
S = Source
D = Drain
Features
Electrically isolated mounting tab
Double metal process for low gate
resistance
Unclamped Inductive Switching
(UIS) rated
Low package inductance
- easy to drive and to protect
Fast intrinsic diode
Applications
DC-DC converters
Switched-mode and resonant-mode
power supplies
DC choppers
Pulse generation
Laser drivers
Advantages
2500 V~ Electrical isolation
ISOPLUS 264^TM package for clip or
spring mounting
Space savings
High power density
© 2008 IXYS CORPORATION, All rights reserved
DS99512A(05/08)