IXFL38N100P Datasheet, PDF (1/5 Pages) IXYS Corporation – Polar Power MOSFET HiPerFET

Preliminary Technical Information
Polar^TM Power MOSFET
HiPerFET^TM
( Electrically Isolated Tab)
IXFL38N100P
V_DSS =
I_D25 =
≤ R_DS(on)
t_rr
≤
1000V
29A
230mΩ
300ns
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
ISOPLUS i5-Pak^TM (HV)
Symbol
V_DSS
V_DGR
V_GSS
V_GSM
I_D25
I_DM
I_A
E_AS
dV/dt
P_D
T_J
T_JM
T_stg
T_L
T_SOLD
V_ISOL
F_C
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C, R_GS = 1MΩ
Continuous
Transient
Maximum Ratings
1000
V
1000
V
± 30
V
± 40
V
T_C = 25°C
T_C = 25°C, Pulse Width Limited by T_JM
T_C = 25°C
T_C = 25°C
29
A
120
A
19
A
2
J
I_S ≤ I_DM, V_DD ≤ V_DSS, T_J ≤ 150°C
T_C = 25°C
15
520
-55 ... +150
150
-55 ... +150
V/ns
W
°C
°C
°C
Maximum Lead Temperature for Soldering
Plastic Body for 10s
300
°C
260
°C
50/60 Hz, RMS, 1 minute
I_ISOL ≤ 1mA
t = 1s
Mounting Force
2500
3000
40..120/4.5..27
V~
V~
N/lb.
8
g
Symbol
Test Conditions
(T_J = 25°C, Unless Otherwise Specified)
BV_DSS
V_GS = 0V, I_D = 3mA
V_GS(th)
V_DS = V_GS, I_D = 1mA
I_GSS
V_GS = ± 30V, V_DS = 0V
I_DSS
V_DS = V_DSS , V_GS = 0V
T_J = 125°C
R_DS(on)
V_GS = 10V, I_D = 19A, Note 1
Characteristic Values
Min. Typ. Max.
1000
V
3.5
6.5 V
± 300 nA
50 μA
4 mA
230 mΩ
G
S
D
ISOLATED TAB
G = Gate
S = Source
D = Drain
Features
z _{Silicon Chip on Direct-Copper-Bond}
Substrate
- High Power Dissipation
- Isolated Mounting Surface
- 2500V Electrical Isolation
z _{International Standard Packages}
z _{miniBLOC, with Aluminium Nitride}
Isolation
z _{Low Drain to Tab Capacitance(<30pF)}
z _{Rugged Polysilicon Gate Cell}
Structure
z _{Avalanche Rated}
z _{Fast Intrinsic Diode}
Advantages
z _{Easy Assembly}
z _{Space Savings}
z _{High Power Density}
Applications
z _{Switched-Mode and Resonant-Mode}
Power Supplies
z _{DC-DC Converters}
z _{Laser Drivers}
z _{AC and DC Motor Drives}
z _{Robotics and Servo Controls}
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DS99755B(7/09)