IXFL36N110P Datasheet, PDF (1/2 Pages) IXYS Corporation – Polar Power MOSFET HiPerFET

Advance Technical Information
Polar^TM Power MOSFET
HiPerFET^TM
IXFL36N110P
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
V_DSS
V_DGR
V_GSS
V_GSM
I_D25
I_DM
I_AR
E_AS
dV/dt
P_D
T_J
T_JM
T_stg
T_L
T_SOLD
V_ISOL
F_C
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C, R_GS = 1MΩ
Continuous
Transient
T_C = 25°C
T_C = 25°C, pulse width limited by T_JM
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, V_DD ≤ V_DSS, T_J ≤ 150°C
T_C = 25°C
Maximum lead temperature for soldering
Plastic body for 10s
50/60 Hz, RMS, 1 minute
I_ISOL ≤ 1mA
Mounting force
t = 1s
Maximum Ratings
1100
V
1100
V
± 30
V
± 40
V
26
A
110
A
18
A
2
J
20
V/ns
520
W
-55 ... +150
150
-55 ... +150
300
260
2500
3000
40..120/4.5..27
°C
°C
°C
°C
°C
V~
V~
N/lb.
8
g
Symbol
Test Conditions
(T_J = 25°C, unless otherwise specified)
BV_DSS
V_GS = 0V, I_D = 3mA
V_GS(th)
V_DS = V_GS, I_D = 1mA
I_GSS
V_GS = ± 30V, V_DS = 0V
I_DSS
V_DS = V_DSS
V_GS = 0V
T_J = 125°C
R_DS(on)
V_GS = 10V, I_D = 18A, Note 1
Characteristic Values
Min. Typ. Max.
1100
V
3.5
6.5 V
± 300 nA
50 μA
4 mA
260 mΩ
V_DSS =
I_D25 =
≤ R_DS(on)
t_rr
≤
1100V
26A
260mΩ
300ns
ISOPLUS i5-Pak^TM (HV)
G
S
G = Gate
S = Source
D
D = Drain
Features
z _{UL recognized package}
z _{Silicon chip on Direct-Copper-Bond}
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
z _{Unclamped Inductive Switching (UIS)}
rated
z _{Low package inductance}
- easy to drive and to protect
z _{Fast intrinsic diode}
Advantages
z _{Easy to mount}
z _{Space savings}
z _{High power density}
Applications:
z _{High Voltage Switched-mode and}
resonant-mode power supplies
z _{High Voltage Pulse Power Applications}
z _{High Voltage Discharge circuits in}
Lasers Pulsers, Spark Igniters, RF
Generators
z _{High Voltage DC-DC converters}
z _{High Voltage DC-AC inverters}
© 2008 IXYS CORPORATION, All rights reserved
DS99907A (04/08)