IXFL132N50P3 Datasheet, PDF (1/6 Pages) IXYS Corporation – Polar3 HiPerFET Power MOSFET

Polar3^TM HiPerFET^TM
Power MOSFET
IXFL132N50P3
(Electrically Isolated Tab)
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
Symbol
V_DSS
V_DGR
V_GSS
V_GSM
I_D25
I_DM
I_A
E_AS
dv/dt
P_D
T_J
T_JM
T_stg
T_L
T_SOLD
F_C
V_ISOL
Weight
Test Conditions
T_J = 25C to 150C
T_J = 25C to 150C, R_GS = 1M
Continuous
Transient
Maximum Ratings
500
V
500
V
30
V
40
V
T_C = 25C
T_C = 25C, Pulse Width Limited by T_JM
T_C = 25C
T_C = 25C
I_S  I_DM, V_DD  V_DSS, T_J  150C
T_C = 25C
63
330
66
2
35
520
-55 ... +150
150
-55 ... +150
A
A
A
J
V/ns
W
C
C
C
Maximum Lead Temperature for Soldering
300
°C
Plastic Body for 10s
260
°C
Mounting Force
40..120 / 9..27
N/lb.
50/60 Hz, RMS t = 1 min
I_ISOL  1 mA
t=1s
2500
V~
3000
V~
8
g
Symbol
Test Conditions
(T_J = 25C Unless Otherwise Specified)
BV_DSS
V_GS = 0V, I_D = 3mA
V_GS(th)
V_DS = V_GS, I_D = 8mA
I_GSS
V_GS = 30V, V_DS = 0V
I_DSS
V_DS = V_DSS, V_GS = 0V
T_J = 125C
R_DS(on)
V_GS = 10V, I_D = 66A, Note 1
Characteristic Values
Min. Typ. Max.
500
V
3.0
5.0 V
200 nA
50 A
3 mA
43 m
V_DSS =
I_D25 =
 R_DS(on)
t_rr

500V
63A
43m
250ns
ISOPLUS264
G
D
S
Isolated Tab
G = Gate D = Drain
S = Source
Features
 _{Silicon Chip on Direct-Copper-Bond}
Substrate
- High Power Dissipation
- Isolated Mounting Surface
- 2500V~ Electrical Isolation
 _{Avalanche Rated}
 _{Low Package Inductance}
 _{Fast Intrinsic Rectifier}
 _{Low RDS(on) and QG}
Advantages
 _{Easy to Mount}
 _{Space Savings}
Applications
 _{DC-DC Converters}
 _{Battery Chargers}
 _{Switch-Mode and Resonant-Mode}
Power Supplies
 _{Uninterrupted Power Supplies}
 _{AC Motor Drives}
 _{High Speed Power Switching}
Applications
© 2014 IXYS CORPORATION, All Rights Reserved
DS100409B(6/14)