IXFK90N60X Datasheet, PDF (1/5 Pages) IXYS Corporation – Preliminary Technical Information

Preliminary Technical Information
X-Class HiPerFET^TM
Power MOSFET
IXFK90N60X
IXFX90N60X
V_DSS =
I_D25 =
R_DS(on) 
600V
90A
38m
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
TO-264P (IXFK)
Symbol
V_DSS
V_DGR
V_GSS
V_GSM
I_D25
I_DM
I_A
E_AS
P_D
dv/dt
T_J
T_JM
T_stg
T_L
T_SOLD
M_d
F_C
Weight
Test Conditions
T_J = 25C to 150C
T_J = 25C to 150C, R_GS = 1M
Continuous
Transient
Maximum Ratings
600
V
600
V
 30
V
 40
V
T_C = 25C
T_C = 25C, Pulse Width Limited by T_JM
T_C = 25C
T_C = 25C
T_C = 25C
I_S  I_DM, V_DD  V_DSS, T_J  150°C
90
200
45
3
1100
50
-55 ... +150
150
-55 ... +150
A
A
A
J
W
V/ns
C
C
C
Maximum Lead Temperature for Soldering
300
°C
Plastic Body for 10s
260
°C
Mounting Torque (TO-264)
Mounting Force (PLUS247)
1.13/10
20..120 /4.5..27
Nm/lb.in
N/lb
TO-264
PLUS247
10
g
6
g
Symbol
Test Conditions
(T_J = 25C Unless Otherwise Specified)
BV_DSS
V_GS = 0V, I_D = 3mA
V_GS(th)
V_DS = V_GS, I_D = 8mA
I_GSS
V_GS =  30V, V_DS = 0V
I_DSS
V_DS = V_DSS, V_GS = 0V
T_J = 125C
R_DS(on)
V_GS = 10V, I_D = 0.5 • I_D25, Note 1
Characteristic Values
Min. Typ. Max.
600
V
2.5
4.5 V
100 nA
50 A
1.5 mA
38 m
G
D
Tab
S
PLUS247 (IXFX)
G
D
S
Tab
G = Gate
S = Source
D = Drain
Tab = Drain
Features
 _{International Standard Packages}
 _{Low RDS(ON) and QG}
 _{Avalanche Rated}
 _{Low Package Inductance}
Advantages
 _{High Power Density}
 _{Easy to Mount}
 _{Space Savings}
Applications
 _{Switch-Mode and Resonant-Mode}
Power Supplies
 _{DC-DC Converters}
 _{PFC Circuits}
 _{AC and DC Motor Drives}
 _{Robotics and Servo Controls}
© 2015 IXYS CORPORATION, All Rights Reserved
DS100659B(8/15)