IXFK90N20QS Datasheet, PDF (1/2 Pages) IXYS Corporation – HiPerFET Power MOSFETs

ADVANCED TECHNICAL INFORMATION
HiPerFET^TM
Power MOSFETs
Q Class
N-Channel Enhancement Mode
Avalanche Rated
Low Q_g, High dv/dt,Low t_rr
IXFK90N20Q
IXFK90N20QS
V_DSS
I_D25
R_DS(on)
= 200 V
= 90 A
= 22 mW
t_rr £ 200 ns
Symbol
V_DSS
V_DGR
V_GS
V_GSM
I_D25
I_DM
I_AR
E_AR
dv/dt
P_D
T_J
T_JM
T_stg
T_L
M_d
Weight
Symbol
V_DSS
V_GS(th)
I_GSS
I_DSS
R_DS(on)
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GS = 1 MΩ
Continuous
Transient
T_C = 25°C
T_C = 25°C,
pulse width limited by T_JM
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, di/dt ≤ 100 A/µs, V_DD ≤ V_DSS,
T_J ≤ 150°C, R_G = 2 Ω
T_C = 25°C
1.6 mm (0.063 in) from case for 10 s
Mounting torque
Maximum Ratings
200
V
200
V
±20
V
±30
V
90
A
360
A
100
A
50
mJ
5
V/ns
500
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
- °C
0.9/6
Nm/lb.in.
10
g
Test Conditions
V_GS = 0 V, I_D = 250 µA
V_DS = V_GS, I_D = 8 mA
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
200
V
2
4V
TO-264 AA
(IXFK-S)
G
S
(TAB)
TO-264 AA
(IXFK)
G
D
S
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
l _{IXYS advanced low Qg process}
l _{International standard packages}
l _{Low RDS (on)}
l _{Unclamped Inductive Switching (UIS)}
rated
l _{Fast intrinsic rectifier}
l _{Fast switching}
l _{Molding epoxies meet UL 94 V-0}
flammability classification
V_GS = ±20 V_DC, V_DS = 0
V_DS = 0.8 • V_DSS
V_GS = 0 V
T_J = 25°C
T_J = 125°C
V_GS = 10 V, I_D = 0.5 I_D25
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
±100 nA
200 µA
1 mA
0.022 Ω
Advantages
l _{Easy to mount}
l _{Space savings}
l _{High power density}
l _{S version suitable for surface mounting}
© 1997 IXYS All rights reserved
97536 (10/97)