IXFK80N50P Datasheet, PDF (1/5 Pages) IXYS Corporation – PolarHV HiPerFET Power MOSFET

PolarHV^TM HiPerFET ^{IXFK 80N50P}
Power MOSFET
IXFX 80N50P
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
V=
DSS
I_D25 =
≤ R_DS(on)
t_rr
≤
500 V
80 A
65 mΩ
200 ns
Symbol
Test Conditions
Maximum Ratings TO-264 (IXFK)
V_DSS
V
DGR
T_J = 25° C to 150° C
T
J
=
25°
C
to
150°
C;
R
GS
=
1
MΩ
500
V
500
V
V_GSM
V_GSM
I_D25
I_L
I
DM
I_AR
E_AR
E
AS
Transient
Continuous
T_C = 25° C
Lead Current Limit, RMS
T
C
=
25°
C,
pulse
width
limited
by
T
JM
T_C = 25° C
T_C = 25° C
T
C
= 25° C
± 40
± 30
80
75
200
80
80
3.5
V
V
A
G
D
A
S
A
A ^{PLUS247 (IXFX)}
mJ
J
D (TAB)
dv/dt
P_D
T_J
T_JM
T_stg
T_L
T_SOLD
F_C
M_d
Weight
I_S ≤I_DM, di/dt ≤100 A/µs, V_DD ≤V_DSS,
T_J ≤150° C, R_G = 2 Ω
T_C = 25° C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 seconds
Mounting force (PLUS247)
Mounting torque (TO-264)
TO-264
PLUS247
Symbol
Test Conditions
(T
J
=
25°
C
unless
otherwise
specified)
BV_DSS
V_GS = 0 V, I_D = 500 µA
V_GS(th)
V_DS = V_GS, I_D = 8 mA
I
GSS
V
GS
=
±
30
V,
DC
V
DS
=
0
I_DSS
V_DS = V_DSS
V_GS = 0 V
T_J = 125° C
20
V/ns
1040
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
260
°C
20..120/4.5..25
N/lb
1.13/10 Nm/lb.in.
10
g
6
g
Characteristic Values
Min. Typ. Max.
500
V
3.0
5.0 V
± 200 nA
25 µA
2 mA
D
S
D (TAB)
G = Gate
D = Drain
S = Source
Tab = Collector
Features
l _{International standard package}
l _{Unclamped Inductive Switching (UIS)}
rated
l _{Low package inductance}
- easy to drive and to protect
Advantages
l _{Easy to mount}
l _{Space savings}
l _{High power density}
R_DS(on)
V_GS = 10 V, I_D = 0.5 I_D25
65 mΩ
© 2006 IXYS All rights reserved
DS99437E(03/06)