IXFK73N30 Datasheet, PDF (1/4 Pages) IXYS Corporation – HiPerFET Power MOSFETs

HiPerFET^TM
Power MOSFETs
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t_rr
IXFK 73 N 30
IXFN 73 N 30
V_DSS
I_D25
300 V 73 A
300 V 73 A
t_rr ≤ 200 ns
R_DS(on)
45 mΩ
45 mΩ
Symbol
V_DSS
V_DGR
V_GS
V_GSM
I_D25
I_DM
I_AR
E
AR
dv/dt
P_D
T_J
T_JM
T_stg
T_L
V_ISOL
M
d
Weight
Symbol
V
DSS
V
GS(th)
I_GSS
I_DSS
R_DS(on)
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GS = 1 MΩ
Continuous
Transient
T_C = 25°C
T_C = 25°C, pulse width limited by T_JM
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, di/dt ≤ 100 A/µs, V_DD ≤ V_DSS,
T_J ≤ 150°C, R_G = 2 W
T_C = 25°C
1.6 mm (0.063 in) from case for 10 s
50/60 Hz, RMS t = 1 min
I_ISOL ≤ 1 mA
t=1s
Mounting torque
Terminal connection torque
Maximum Ratings
IXFK
IXFN
300
300
300
300
±20
±20
±30
±30
73
73
292
292
40
40
30
30
5
5
V
V
V
V
A
A
A
mJ
V/ns
500
520
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
-
°C
-
2500
V~
-
3000
V~
0.9/6
-
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
10
30
g
Test Conditions
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
V_GS = 0 V, I_D = 1 mA
300
V_DS = V_GS, I_D = 8 mA
2
V_GS = ±20 V_DC, V_DS = 0
V_DS = 0.8 V_DSS
V_GS = 0 V
T_J = 25°C
T_J = 125°C
V_GS = 10 V, I_D = 0.5 I_D25
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
V
4V
±200 nA
400 uA
2 mA
45 mΩ
TO-264 AA (IXFK)
G
D
S
(TAB)
miniBLOC, SOT-227 B (IXFN)
E153432
S
G
S
D
G = Gate
S = Source
D = Drain
TAB = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
l _{Internationalstandardpackages}
l _{JEDEC TO-264 AA, epoxy meet}
UL 94 V-0, flammability classification
l _{miniBLOC with Aluminium nitride}
isolation
l _{Low RDS (on) HDMOS}TM _process
l _{Rugged polysilicon gate cell structure}
l _{Unclamped Inductive Switching (UIS)}
rated
l _{Low package inductance}
l _{FastintrinsicRectifier}
Applications
l _{DC-DC converters}
l _{Synchronousrectification}
l _{Battery chargers}
l _{Switched-mode and resonant-mode}
power supplies
l _{DC choppers}
l _{Temperature and lighting controls}
l _{Low voltage relays}
Advantages
l _{Easy to mount}
l _{Space savings}
l _{High power density}
© 2001 IXYS All rights reserved
92805J (11/01)