IXFK64N60P Datasheet, PDF (1/5 Pages) IXYS Corporation – N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode

PolarHV^TM HiPerFET
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFK 64N60P
IXFX 64N60P
V
=
DSS
I
=
D25
≤ R_DS(on)
t_rr
≤
600 V
64 A
96 mΩ
200 ns
Symbol
V
DSS
V_DGR
V_GSS
V_GSM
I_D25
I_DM
I_AR
E_AR
E_AS
dv/dt
P_D
T
J
T_JM
T_stg
T_L
T_SOLD
Test Conditions
T
J
= 25° C to 150° C
T_J = 25° C to 150° C; R_GS = 1 MΩ
Continuous
Transient
T_C = 25° C
T_C = 25° C, pulse width limited by T_JM
T_C = 25° C
T_C = 25° C
T_C = 25° C
I_S ≤I_DM, di/dt ≤100 A/µs, V_DD ≤V_DSS,
T_J ≤150° C, R_G = 2 Ω
T_C = 25° C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Maximum Ratings
600
V
600
V
TO-264 (IXFK)
±30
V
±40
V
G
64
A
D
S
150
A
64
A _{PLUS247 (IXFX)}
80
mJ
3.5
J
20
V/ns
(TAB)
1040
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
260
°C
(TAB)
G = Gate D = Drain
S = Source Tab = Drain
F_C
M_d
Weight
Mounting force (PLUS247)
Mounting torque (TO-264)
TO-264
PLUS247
Symbol
Test Conditions
(T_J = 25° C, unless otherwise specified)
BV_DSS
V_GS = 0 V, I_D = 3 mA
V
GS(th)
V = V , I = 8 mA
DS
GS D
I_GSS
V_GS = ±30 V_DC, V_DS = 0
I_DSS
V_DS = V_DSS
V_GS = 0 V
T_J = 125° C
R_DS(on)
V_GS = 10 V, I_D = 0.5 I_D25, Note 1
20..120/4.5..25
N/lb
1.13/10 Nm/lb.in.
10
g
6
g
Characteristic Values
Min. Typ. Max.
600
V
3.0
5.0 V
±200 nA
25 µA
1000 µA
96 m Ω
Features
l _{International standard packages}
l _{Fast recovery diode}
l _{Unclamped Inductive Switching (UIS)}
rated
l _{Low package inductance}
- easy to drive and to protect
Advantages
l _{Easy to mount}
l _{Space savings}
l _{High power density}
© 2006 IXYS All rights reserved
DS99442E(01/06)