IXFK55N50 Datasheet, PDF (1/4 Pages) IXYS Corporation – HiPerFET Power MOSFET

HiPerFET^TM
Power MOSFET
Single Die MOSFET
IXFK 55N50
IXFX 55N50
IXFN 55N50
V_DSS
I_D25
R_DS(on)
t_rr
= 500 V
= 55 A
= 90mΩ
≤ 250 ns
Symbol
V_DSS
V_DGR
V_GSS
V_GSM
I_D25
I_DM
I_AR
E_AR
dv/dt
P_D
T_J
T_JM
T_stg
T_L
M_d
V_ISOL
Weight
Test Conditions
Maximum Ratings
T_J = 25°C to 150°C
T_J = 25°C to 150°C
Continuous
Transient
500
V
500
V
±20
V
±30
V
T_C = 25°C
T_C = 25°C, pulse width limited by T_JM
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, di/dt ≤ 100 A/µs, V_DD ≤ V_DSS
T_J ≤ 150°C, R_G = 4 Ω
T_C = 25°C
55
220
55
60
10
625
-55 ... +150
150
-55 ... +150
A
A
A
mJ
V/ns
W
°C
°C
°C
1.6 mm (0.062 in.) from case for 10 s (IXFK, IXFX) 300
°C
Mounting torque
Terminal leads
(IXFK, IXFX)
(IXFN)
1.13/10 Nm/lb.in.
1.13/10 Nm/lb.in.
50/60 Hz, RMS
I_ISOL ≤ 1 mA
PLUS247
TO-264
SOT-227B
(IXFN)
t = 1minute 2500
V~
t=1s
3000
V~
5
g
10
g
30
g
Symbol
Test Conditions
(T_J = 25°C, unless otherwise specified)
V_DSS
V_GS = 0 V, I_D = 1 mA
Characteristic Values
Min. Typ. Max.
500
V
V_GS(th)
V_DS = V_GS, I_D = 8 mA
2.5
4.5 V
I_GSS
V_GS = ±20 V_DC, V_DS = 0
±200 nA
I_DSS
V_DS = V_DSS
V_GS = 0 V
T_J = 125°C
25 µA
2 mA
R_DS(on)
V_GS = 10 V, I_D = 0.5 I_D25
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
90 mΩ
PLUS247(IXFX)
G
C
E
TO-264 AA (IXFK)
(TAB)
G
D
S
D (TAB)
miniBLOC, SOT-227 B (IXFN)
E153432
S
G
S
D
G = Gate
D = Drain
S = Source
TAB = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
• International standard packages
• Encapsulating epoxy meets
UL 94 V-0, flammability classification
• miniBLOC with Aluminium nitride
isolation
• Low R_{DS (on)} HDMOS^TM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
• Low package inductance
• Fast intrinsic Rectifier
Advantages
• PLUS247 package for clip or spring
bar mounting
• Easy to mount
• Space savings
• High power density
© 2004 IXYS All rights reserved
DS97502G(11/04)