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| IXFK52N60Q2_08 Datasheet, PDF (1/2 Pages) IXYS Corporation – HiPerFET Power MOSFETs Q2-Class | |||
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Advance Technical Information
HiPerFETTM
Power MOSFETs
Q2-Class
IXFK52N60Q2
IXFX52N60Q2
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low Qg
Low intrinsic Rg, low trr
VDSS =
ID25 =
RDS(on) â¤
trr
â¤
600V
52A
115mΩ
250ns
TO-264 (IXFK)
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IA
EAS
dV/dt
PD
TJ
TJM
Tstg
TL
TSOLD
Md
FC
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
IS ⤠IDM, VDD ⤠VDSS, TJ ⤠150°C
TC = 25°C
1.6mm (0.062 in.) from case for 10s
Plastic body for 10s
Mounting torque (IXFK)
Mounting force
(IXFX)
TO-264
PLUS247
Maximum Ratings
600
V
600
V
± 30
V
± 40
V
52
A
208
A
52
A
4
J
20
V/ns
735
-55 ... +150
150
-55 ... +150
300
260
1.13/10
20..120 /4.5..27
10
6
W
°C
°C
°C
°C
°C
Nm/lb.in.
N/lb.
g
g
Symbol
BVDSS
VGS(th)
IGSS
IDSS
RDS(on)
Test Conditions
Characteristic Values
(TJ = 25°C unless otherwise specified)
Min. Typ. Max.
VGS = 0V, ID = 3mA
600
V
VDS = VGS, ID = 8mA
VGS = ± 30V, VDS = 0V
3.0
5.5
V
± 200 nA
VDS = VDSS
VGS = 0V
TJ = 125°C
VGS = 10V, ID = 0.5 ⢠ID25, Note 1
25 μA
3 mA
115 mΩ
G
D
S
PLUS247 (IXFX)
(TAB)
G = Gate
S = Source
(TAB)
D = Drain
TAB = Drain
Features
⢠Double metal process for low gate
resistance
⢠International standard packages
⢠Epoxy meet UL 94 V-0, flammability
classification
⢠Avalanche energy and current rated
⢠Fast intrinsic Rectifier
Advantages
⢠Easy to mount
⢠Space savings
⢠High power density
© 2008 IXYS CORPORATION,All rights reserved
DS98982B(05/08)
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