IXFK52N60Q2 Datasheet, PDF (1/2 Pages) IXYS Corporation – Advanced Technical Information

Advanced Technical Information
HiPerFET^TM
Power MOSFETs
Q-Class
IXFK 52N60Q2
IXFX 52N60Q2
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low Q_g
Low intrinsic R_g, low t_rr
V_DSS = 600 V
I_D25
= 52 A
R_DS(on) = 115 mΩ
t_rr ≤ 250 ns
Symbol
V_DSS
V_DGR
V_GS
V_GSM
I_D25
I_DM
I_AR
E_AR
E_AS
dv/dt
P_D
T_J
T_JM
T_stg
T_L
M_d
Weight
Symbol
V_DSS
V_GS(th)
I_GSS
I_DSS
R_DS(on)
Test Conditions
TT_JJ
= 25°C to 150°C
= 25°C to 150°C; R_GS = 1 MΩ
Continuous
Transient
TT_CC
= 25°C
= 25°C, pulse width limited by T_JM
T_C = 25°C
T_C = 25°C
T_C = 25°C
I_S ≤ I_DM, di/dt ≤ 100 A/µs, V_DD ≤ V_DSS,
T_J ≤ 150°C, R_G = 2 Ω
T_C = 25°C
1.6 mm (0.063 in) from case for 10 s
Maximum Ratings
600
V
600
V
±30
V
±40
V
52
A
208
A
52
A
75
mJ
4.0
J
20
V/ns
735
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
Mounting torque
TO-264
0.9/6 Nm/lb.in.
PLUS-247
TO-264
6
g
10
g
PLUS 247^TM (IXFX)
D (TAB)
G
D
TO-264 AA (IXFK)
G
D
S
D (TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Test Conditions
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
V_GS = 0 V, I_D = 3mA
600
V_DS = V_GS, I_D = 8 mA
2.0
V_GS = ±30 V_DC, V_DS = 0
VV_GDSS
=
=
0V^DV^SS
TT_JJ
=
=
25°C
125°C
VP_GuSlse=
10 V,
test, t
I_D
≤
3=000.5µs• ,I^Dd²u⁵ ty
cycle
d
≤
2
%
V
4.5 V
±200 nA
50 µA
2 mA
115 mΩ
Features
z _{Double metal process for low gate}
resistance
z _{International standard packages}
z _{Epoxy meet UL 94 V-0, flammability}
classification
z _{Avalanche energy and current rated}
z _{Fast intrinsic Rectifier}
Advantages
z _{Easy to mount}
z _{Space savings}
z _{High power density}
© 2003 IXYS All rights reserved
DS98982A(12/03)