IXFK48N60P Datasheet, PDF (1/4 Pages) IXYS Corporation – PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode

PolarHV^TM HiPerFET
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFK 48N60P
IXFX 48N60P
V
DSS
I_D2
R_DS(on)
t_rr
= 600 V
= 48 A
≤ 135mΩ
≤ 200 ns
Symbol
Test Conditions
TO-264 (IXFK)
Maximum Ratings
V_DSS
V_DGR
T_J = 25° C to 150° C
T_J = 25° C to 150° C; R_GS = 1 MΩ
600
V
600
V
V_GSS
V_GSM
I
D25
I_DM
I_AR
E_AR
E_AS
Continuous
Transient
T
C
= 25° C
T_C = 25° C, pulse width limited by T_JM
T_C = 25° C
T_C = 25° C
T_C = 25° C
±30
V
G
±40
V
D
S
(TAB)
48
A
110
A _{PLUS247 (IXFX)}
48
A
70
mJ
2.0
J
dv/dt
P_D
T_J
T_JM
T_stg
I_S ≤I_DM, di/dt ≤100 A/µs, V_DD ≤V_DSS,
T_J ≤150° C, R_G = 4 Ω
T_C = 25° C
20
V/ns
830
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
(TAB)
G = Gate D = Drain
S = Source Tab = Drain
M_d
Weight
Mounting torque (TO-264)
TO-264
PLUS247
1.13/10 Nm/lb.in.
10
g
6
g
Features
T_L
T_SOLD
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Symbol
Test Conditions
(T_J = 25° C, unless otherwise specified)
BV
DSS
V
GS
=
0
V,
I
D
=
250
µA
V_GS(th)
V_DS = V_GS, I_D = 8 mA
300
°C
260
°C
Characteristic Values
Min. Typ. Max.
600
V
l _{International standard packages}
l _{Fast recovery diode}
l _{Unclamped Inductive Switching (UIS)}
rated
l _{Low package inductance}
- easy to drive and to protect
3.0
5.0 V ^Advantages
I_GSS
V_GS = ±30 V_DC, V_DS = 0
I_DSS
V_DS = V_DSS
V =0V
GS
T
J
=
125°
C
±200 nA ^l Easy to mount
l _{Space savings}
25 µA _{l High power density}
1000 µA
R_DS(on)
V_GS = 10 V, I_D = 0.5 I_D25
Pulse test, t ≤300 µs, duty cycle d ≤ 2 %
135 m Ω
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DS99375E(02/06)