IXFK48N55 Datasheet, PDF (1/2 Pages) IXYS Corporation – HiPerFET Power MOSFETs

HiPerFET^TM
Power MOSFETs
Single MOSFET Die
Avalanche Rated
IXFK 48N55
IXFX 48N55
V_DSS = 550 V
I_D25 = 48 A
= R_DS(on) 110 mW
t_rr £ 250 ns
Preliminary data
Symbol
V_DSS
V
DGR
V_GS
V
GSM
I
D25
I_DM
I
AR
E_AR
E
AS
dv/dt
P_D
T_J
T_JM
T_stg
T_L
M
d
Weight
Symbol
V_DSS
V_GS(th)
I_GSS
I_DSS
R_DS(on)
Test Conditions
T_J = 25°C to 150°C
T
J
=
25°C
to
150°C;
R
GS
=
1
MW
Continuous
Transient
T
C
= 25°C
T_C = 25°C, pulse width limited by T_JM
T
C
= 25°C
T_C = 25°C
T
C
= 25°C
I_S £ I_DM, di/dt £ 100 A/ms, V_DD £ V_DSS
T_J £ 150°C, R_G = 2 W
T_C = 25°C
1.6 mm (0.063 in.) from case for 10 s
Mounting torque TO-264
PLUS 247
TO-264
Maximum Ratings
550
V
550
V
±20
V
±30
V
48
A
192
A
44
A
60
mJ
3
J
5 V/ns
560
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
0.9/6 Nm/lb.in.
6
g
10
g
Test Conditions
V_GS = 0 V, I_D = 3mA
V_DS = V_GS, I_D = 8mA
V_GS = ±20 V, V_DS = 0
V_DS = V_DSS
V_GS = 0 V
V_GS = 10 V, I_D = 0.5 • I_D25
Note 1
Characteristic Values
(T
J
=
25°C,
unless
otherwise
specified)
min. typ. max.
550
V
2.5
4.5 V
±200 nA
T_J = 125°C
100 mA
2 mA
110 mW
PLUS 247^TM (IXFK)
G
(TAB)
D
TO-264 AA (IXFK)
G
D
S
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
• Internationalstandardpackages
• Low R HDMOS^TM process
DS (on)
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
• Low package inductance
- easy to drive and to protect
• Fast intrinsic rectifier
Applications
• DC-DC converters
• Battery chargers
• Switched-modeandresonant-mode
power supplies
• DC choppers
• AC motor control
• Temperatureandlightingcontrols
Advantages
• PLUS 247^TMpackage for clip or spring
mounting
• Space savings
• High power density
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
98712 (3/24/00)
1-2