IXFK48N50Q_03 Datasheet, PDF (1/4 Pages) IXYS Corporation – HiPerFET Power MOSFETs Q-CLASS

HiPerFET^TM
Power MOSFETs
Q-CLASS
Single MOSFET Die
N-Channel Enhancement Mode
Avalanche Rated, Low Qg
High dV/dt, Low t_rr
V_DSS I_D25
R_DS(on)
IXFK/IXFX 48N50Q 500 V 48 A 100 mΩ
IXFK/IXFX 44N50Q 500 V 44 A 120 mΩ
t_rr ≤ 250 ns
PLUS 247^TM (IXFX)
Symbol
V_DSS
V_DGR
V_GS
V_GSM
I_D25
I_DM
I_AR
E_AR
E_AS
dv/dt
P_D
T_J
T_JM
T_stg
T_L
M_d
Weight
Symbol
V_DSS
V_GS(th)
I_GSS
I_DSS
R_DS(on)
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GS = 1 MΩ
Continuous
Transient
T_C = 25°C
T_C = 25°C, pulse width limited by T_JM
T_C = 25°C
TT_CC
= 25°C
= 25°C
IT_SJ
≤
≤
I1_{D5M0, °}dCi/d, tR≤_G
100
=2
A/µs,
Ω
V_DD
≤
V_DSS
T_C = 25°C
1.6 mm (0.063 in.) from case for 10 s
Mounting torque TO-264
PLUS 247
TO-264
Maximum Ratings
44N50
48N50
44N50
48N50
500
V
500
V
±20
V
±30
V
44
A
48
A
176
A
192
A
48
A
60
mJ
2.5
J
15 V/ns
500
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
0.4/6 Nm/lb.in.
6g
10 g
Test Conditions
V_GS = 0 V, I_D = 250uA
V_DS = V_GS, I_D = 4mA
V_GS = ±20 V, V_DS = 0
V_DS = V_DSS
V_GS = 0 V
V_GS = 10 V, I_D = 0.5 • I_D25
Note 1
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
500
V
2.0
4.0 V
±100 nA
T_J = 125°C
44N50
48N50
100 µA
2 mA
120 mΩ
100 mΩ
G
D
TO-264 AA (IXFK)
(TAB)
G
DS
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
z _{IXYS advanced low Qg process}
z _{Low gate charge and capacitances}
- easier to drive
- faster switching
z _{International standard packages}
z _{Low RDS (on)}
z _{Rated for unclamped Inductive load}
switching (UIS) rated
z _{Molding epoxies meet UL 94 V-0}
flammability classification
Applications
z _{DC-DC converters}
z _{Battery chargers}
z _{Switched-mode and resonant-mode}
power supplies
z _{DC choppers}
z _{AC motor control}
z _{Temperature and lighting controls}
Advantages
z _{PLUS 247}TM _{package for clip or spring}
mounting
z _{Space savings}
z _{High power density}
© 2003 IXYS All rights reserved
DS98612D(08/03)